Volume 47; Issue 1

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Applied Physics Letters
Volume 47; Issue 1

Applied Physics Letters

Volume 47; Issue 1

1

NpnN double-heterojunction bipolar transistor on InGaAsP/InP

Su, L. M., Grote, N., Kaumanns, R., Schroeter, H.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 442 KB

english, 1985

2

Optical detection of ultrasound at a distance using a confocal Fabry–Perot interferometer

Monchalin, Jean-Pierre

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 489 KB

english, 1985

3

A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates

Feng, Z. C., Mascarenhas, A., Choyke, W. J., Farrow, R. F. C., Shirland, F. A., Takei, W. J.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 414 KB

english, 1985

4

7-GHz acoustic transmission through a Hertzian contact

Heffner, B. L., Kino, G. S., Khuri-Yakub, B. T.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 421 KB

english, 1985

5

Schottky barrier diodes using thick, well-characterized boron phosphide wafers

Kumashiro, Y., Okada, Y.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 446 KB

english, 1985

6

Time-resolved exciton recombination in CdTe/Cd1−xMnxTe multiple quantum wells

Zhang, X.-C., Chang, S.-K., Nurmikko, A. V., Kolodziejski, L. A., Gunshor, R. L., Datta, S.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 528 KB

english, 1985

7

Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium source

Zhu, L. D., Chan, K. T., Ballantyne, J. M.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 426 KB

english, 1985

8

Response to ‘‘Comment on ‘Bulk photovoltaic effect in polyvinylidene fluoride’ ’’ [Appl. Phys. Lett. 47, 67 (1985)]

Ogden, T. R., Gookin, D. M.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 377 KB

english, 1985

9

High intensity submillimeter photoresponse of a Si inversion layer

Verma, I. B., Leung, M., Drew, H. D., Doezema, R. E., Furneaux, J. E., Wagner, R. J.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 522 KB

english, 1985

10

Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition

Chan, K. T., Zhu, L. D., Ballantyne, J. M.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 424 KB

english, 1985

11

Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices

Zekeriya, Viktor, Ma, T-P.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 428 KB

english, 1985

12

1.54-μm phase-adjusted InGaAsP/InP distributed feedback lasers with mass-transported windows

Broberg, Björn, Koentjoro, Sekartedjo, Furuya, Kazuhito, Suematsu, Yasuharu

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 435 KB

english, 1985

13

Measurement of high boron concentrations in silicon by infrared spectroscopy

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 421 KB

english, 1985

14

Stresses in the InP/Ti/Pt and InP/SiO2/Ti/Pt multilayer systems

Dautremont-Smith, W. C., Woelfer, S. M.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 457 KB

english, 1985

15

Tilted-mirror semiconductor lasers

Salzman, J., Lang, R., Margalit, S., Yariv, A.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 415 KB

english, 1985

16

Low-temperature liquid phase epitaxial growth of an (In,Ga,Al)Sb quaternary alloy

Ohshima, Hisayoshi, Tanaka, Akira, Sukegawa, Tokuzo

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 340 KB

english, 1985

17

Tungsten-platinum alloy Schottky barriers on n-type GaAs

Okumura, T., Tu, K. N.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 426 KB

english, 1985

18

Role of mechanical stress in the light-induced degradation of hydrogenated amorphous silicon

Stutzmann, Martin

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 507 KB

english, 1985

19

Persistent photoconductivity in quantum well resonators

Sollner, T. C. L. G., Le, H. Q., Correa, C. A., Goodhue, W. D.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 516 KB

english, 1985

20

1.55-μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers

Koch, T. L., Bridges, T. J., Burkhardt, E. G., Corvini, P. J., Coldren, L. A., Linke, R. A., Tsang, W. T., Logan, R. A., Johnson, L. F., Kazarinov, R. F., Yen, R., Wilt, D. P.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 560 KB

english, 1985

21

Atomic layer epitaxy of III-V binary compounds

Bedair, S. M., Tischler, M. A., Katsuyama, T., El-Masry, N. A.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 530 KB

english, 1985

22

Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter

Chang, C. Y., Wu, B. S., Fang, Y. K., Lee, R. H.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 503 KB

english, 1985

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