Volume 47; Issue 8

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Applied Physics Letters
Volume 47; Issue 8

Applied Physics Letters

Volume 47; Issue 8

1

Schottky barrier height measurements of epitaxial NiSi2 on Si

Hauenstein, R. J., Schlesinger, T. E., McGill, T. C., Hunt, B. D., Schowalter, L. J.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 550 KB

english, 1985

2

Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures

Wang, W. I., Mendez, E. E., Kuan, T. S., Esaki, L.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 598 KB

english, 1985

3

Inverted base-collector tunnel transistors

Bonnefoi, A. R., Chow, D. H., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 552 KB

english, 1985

4

Raman scattering determination of free-carrier concentration and surface space-charge layer in â©100âª n-GaAs

Shen, H., Pollak, Fred H., Sacks, R. N.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 422 KB

english, 1985

5

Efficient second harmonic generation of 10-Î¼m radiation in AgGaSe2

Eckardt, R. C., Fan, Y. X., Byer, R. L., Route, R. K., Feigelson, R. S., van der Laan, Jan

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 457 KB

english, 1985

6

Analysis of light and current induced effects in hydrogenated amorphous silicon

Yamagishi, H., Kida, H., Kamada, T., Okamoto, H., Hamakawa, Y.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 484 KB

english, 1985

7

Direct evidence for co-aggregation of carbon and oxygen in Czochralski silicon

Shimura, F., Hockett, R. S., Reed, D. A., Wayne, D. H.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 522 KB

english, 1985

8

n-MoSe2/p-WSe2 heterojunctions

Späh, R., Lux-Steiner, M., Obergfell, M., Bucher, E., Wagner, S.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 480 KB

english, 1985

9

Interfacial forces and the fundamental nature of brittle cracks

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 513 KB

english, 1985

10

GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy

Kuo, C. P., Fry, K. L., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 505 KB

english, 1985

11

Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers

Göbel, E. O., Höger, R., Kuhl, J., Polland, H. J., Ploog, K.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 520 KB

english, 1985

12

Broadband laser diode emitting at 1.28 μm wavelength

Takada, K., Noda, J.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 527 KB

english, 1985

13

Melting of Ni40Pd40P20 glass

Kui, H. W., Turnbull, D.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 419 KB

english, 1985

14

Effects of implanted hydrogen on Pd2Si formation

Paccagnella, A., Majni, G., Ottaviani, G., Della Mea, G.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 505 KB

english, 1985

15

GaAs/GaAs1−ySby strained-layer superlattices grown by molecular beam epitaxy

Klem, J., Peng, C. K., Henderson, T., Morkoç, H., Otsuka, N., Choi, C., Yu, P. W.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 532 KB

english, 1985

16

(100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs

Kolodziejski, L. A., Gunshor, R. L., Otsuka, N., Zhang, X.-C., Chang, S.-K., Nurmikko, A. V.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 599 KB

english, 1985

17

Microstructural, chemical, and electrical characterization of the beta silicon carbide thin-film silicon substrate interface

Ryu, J., Kim, H. J., Davis, Robert F.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 578 KB

english, 1985

18

Elimination of ionized impurity scattering in heavily doped GaxIn1−xAsyP1−y

Shantharama, L. G., Adams, A. R., Allen, E. M., Greene, P. D.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 497 KB

english, 1985

19

Selective Ge deposition on Si using thermal decomposition of GeH4

Ishii, Hiromu, Takahashi, Yasuo, Murota, Junichi

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 513 KB

english, 1985

20

Growth of the 889 cm−1 infrared band in annealed electron-irradiated silicon

Svensson, Bengt G., Lindström, J. Lennart, Corbett, James W.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 493 KB

english, 1985

21

Erratum: External field enhanced optical bistability in nematic liquid crystals [Appl. Phys. Lett. 46, 822 (1985)]

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 285 KB

english, 1985

22

Raman study on silica optical fibers subjected to high tensile stress

Hibino, Yoshinori, Hanafusa, Hiroaki, Ema, Kazuhiro, Hyodo, Shin-ichi

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 487 KB

english, 1985

23

Energy extraction measurements of an electron beam pumped, high Kr concentration KrF laser at elevated temperatures

Salesky, E. T., Kimura, W. D.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 537 KB

english, 1985

24

Antiphase boundaries in GaAs

Cho, N.-H., De Cooman, B. C., Carter, C. B., Fletcher, R., Wagner, D. K.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 537 KB

english, 1985

25

Photoinduced modulation absorption by tuning pumping wavelength

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 351 KB

english, 1985

26

Radiation resistance of InP solar cells under light illumination

Ando, Koushi, Yamaguchi, Masafumi

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 477 KB

english, 1985

27

Intracavity nearly degenerate four-wave mixing in a (GaAl)As semiconductor laser

Nakajima, Hisao, Frey, Robert

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 449 KB

english, 1985

28

Low-temperature impact ionization rates in (111) oriented InP

Osaka, Fukunobu, Kishi, Yutaka, Kobayashi, Masahiro, Mikawa, Takashi

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 346 KB

english, 1985

29

Dominant moving species in the formation of amorphous NiZr by solid-state reaction

Cheng, Y.-T., Johnson, W. L., Nicolet, M.-A.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 465 KB

english, 1985

30

Solid phase epitaxy of deposited amorphous Ge on GaAs

Palmstro̸m, C. J., Galvin, G. J.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 439 KB

english, 1985

31

Phase-matched second harmonic generation by a surface polariton along a silver layer on a slab-type optical waveguide

Sasaki, K., Kawagishi, H., Ishijima, Y.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 400 KB

english, 1985

32

Picosecond pulse amplification using a copper vapor laser

Hopkins, J. B., Rentzepis, P. M.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 477 KB

english, 1985

33

Spectral and temporal characteristics of AlGaAs/GaAs superlattice p-i-n photodetectors

Larsson, A., Yariv, A., Tell, R., Maserjian, J., Eng, S. T.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 460 KB

english, 1985

34

Stabilization and luminescent properties of GaP/GaAs0.4P0.6 strained-layer superlattice electrodes

Johnson, Phelps B., Ellis, Arthur B., Biefeld, R. M., Ginley, D. S.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 480 KB

english, 1985

35

Deposition of indium antimonide films by metalorganic magnetron sputtering

Webb, James B., Halpin, C.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 454 KB

english, 1985

36

EL2-related defects in neutron irradiated GaAs1−xPx alloys

Muñoz, E., García, F., Jimenez, B., Calleja, E., Gomez, A., Alcober, V.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 435 KB

english, 1985

37

Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design

Lin, Hao-Hsiung, Lee, Si-Chen

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 431 KB

english, 1985

38

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

Kuech, T. F., Potemski, R.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 486 KB

english, 1985

39

High quality epitaxial GaAs and InP wafers by isoelectronic doping

Beneking, H., Narozny, P., Emeis, N.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 527 KB

english, 1985

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