Volume 48; Issue 10

Applied Physics Letters

Volume 48; Issue 10
1

Effect of nonlinear gain reduction on semiconductor laser wavelength chirping

Koch, T. L., Linke, R. A.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 481 KB
english, 1986
2

Optical properties of thin nematic liquid crystal cells

Wu, Shin-Tson, Efron, Uzi
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 454 KB
english, 1986
4

Nanometer molecular lithography

Douglas, Kenneth, Clark, Noel A., Rothschild, Kenneth J.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 541 KB
english, 1986
6

Magnetic properties of Fe-R-B powders

Gudimetta, K., Christodoulou, C. N., Hadjipanayis, G. C.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 406 KB
english, 1986
9

Si film as an annealing cap for Si-implanted GaAs

Shim, Tae Earn, Itoh, Tadatsugu, Yamamoto, Yasuhiro, Suzuki, Setsu
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 421 KB
english, 1986
11

Point defect kinetics and dopant diffusion during silicon oxidation

Mathiot, D., Pfister, J. C.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 372 KB
english, 1986
12

Control of a natural permeable CoSi2 base transistor

Tung, R. T., Levi, A. F. J., Gibson, J. M.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 466 KB
english, 1986
13

Deep donor model for the persistent photoconductivity effect

Hjalmarson, Harold P., Drummond, T. J.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 407 KB
english, 1986
14

Development of preferentially current-generating silicon solar cells

Silard, Andrei, Pera, Florin, Nani, Gabriel
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 417 KB
english, 1986
15

Amphoteric defects at the Si-SiO2 interface

Chang, S. T., Wu, J. K., Lyon, S. A.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 432 KB
english, 1986