Volume 48; Issue 11

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Applied Physics Letters
Volume 48; Issue 11

Applied Physics Letters

Volume 48; Issue 11

1

Microstructure, domain walls, and magnetization reversal in hot-pressed Nd-Fe-B magnets

Mishra, Raja K., Lee, Robert W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 529 KB

english, 1986

2

Generation of soft x rays using a rare gas-hydrogen plasma focus and its application to x-ray lithography

Kato, Y., Be, S. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 411 KB

english, 1986

3

Homogeneity qualification of GaAs substrates for large scale integration applications

Maluenda, J., Martin, G. M., Schink, H., Packeiser, G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 443 KB

english, 1986

4

Spatial location of electron trapping defects on silicon by scanning tunneling microscopy

Welland, M. E., Koch, R. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 567 KB

english, 1986

5

A method of poling LiNbO3 and LiTaO3 below Tc

Haycock, P. W., Townsend, P. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 371 KB

english, 1986

6

Significant enhancement of XeCl(B, C) and XeF(B, C) formation rate constants in reactions of Xe(5p56p) atoms with halogen donors

Ku, J. K., Setser, D. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 468 KB

english, 1986

7

Recombination mechanisms in Si and Si thin films determined by picosecond reflectivity measurements near Brewster’s angle

Fauchet, P. M., Nighan, W. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 391 KB

english, 1986

8

Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy

Fujiwara, K., Nishikawa, Y., Tokuda, Y., Nakayama, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

9

Amorphous transition phase of NiSi2

Vanderwalker, D. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 352 KB

english, 1986

10

Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy

Reynolds, D. C., Bajaj, K. K., Litton, C. W., Yu, P. W., Klem, J., Peng, C. K., Morkoç, H., Singh, Jasprit

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 379 KB

english, 1986

11

All-optical power limiting of CO2 laser pulses using cascaded optical bistable elements

Walker, A. C., Kar, A. K., Ji, Wei, Keller, U., Smith, S. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 378 KB

english, 1986

12

Hydrogen passivation of the oxygen-related thermal-donor defect in silicon

Johnson, N. M., Hahn, S. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

13

Generation of highly monochromatic positrons using cold moderators

Brown, B. L., Crane, W. S., Mills, A. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 355 KB

english, 1986

14

First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands

Razeghi, M., Duchemin, J. P., Portal, J. C., Dmowski, L., Remeni, G., Nicholas, R. J., Briggs, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 444 KB

english, 1986

15

Studies of atomic and molecular fluorine reactions on silicon surfaces

Stinespring, C. D., Freedman, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 523 KB

english, 1986

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