Volume 48; Issue 13

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Applied Physics Letters
Volume 48; Issue 13

Applied Physics Letters

Volume 48; Issue 13

1

High efficiency polycrystalline silicon solar cells using phosphorus pretreatment

Narayanan, S., Wenham, S. R., Green, M. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 443 KB

english, 1986

2

Recrystallization of amorphous silicon film by tungsten halogen lamp annealing

Arai, Hitoshi, Nakazawa, Kenji, Kohda, Shigeto

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

3

Stability of nonlinear stationary waves guided by a thin film bounded by nonlinear media

Moloney, J. V., Ariyasu, J., Seaton, C. T., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 381 KB

english, 1986

4

Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerface

Yamanaka, K., Fukunaga, T., Tsukada, N., Kobayashi, K. L. I., Ishii, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 450 KB

english, 1986

5

Simultaneous optical pulse compression and wing reduction

Halas, N. J., Grischkowsky, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 504 KB

english, 1986

6

Thermal detection of electron spin resonance in the persistent photoconductive state of semi-insulating GaAs crystals grown from pyrolytic BN crucibles

Blazey, K. W., Schneider, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 447 KB

english, 1986

7

Subpicosecond excitonic electroabsorption in room-temperature quantum wells

Knox, W. H., Miller, D. A. B., Damen, T. C., Chemla, D. S., Shank, C. V., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 493 KB

english, 1986

8

Effect of pulse sharpening on imploding neon Z-pinch plasmas

Stephanakis, S. J., Apruzese, J. P., Burkhalter, P. G., Davis, J., Meger, R. A., McDonald, S. W., Mehlman, G., Ottinger, P. F., Young, F. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 487 KB

english, 1986

9

Imaging in real time with the tunneling microscope

Bryant, A., Smith, D. P. E., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 492 KB

english, 1986

10

Physical processes in degradation of amorphous Si:H

Redfield, David

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 481 KB

english, 1986

11

Excimer lasers in cardiovascular surgery: Ablation products and photoacoustic spectrum of the arterial wall

Singleton, D. L., Paraskevopoulos, G., Jolly, G. S., Irwin, R. S., McKenney, D. J., Nip, W. S., Farrell, E. M., Higginson, L. A. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

12

Stacking and layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures

Meehan, K., Hsieh, K. C., Costrini, G., Kaliski, R. W., Holonyak, N., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 528 KB

english, 1986

13

Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

Kakuchi, Masami, Hikita, Makoto, Tamamura, Toshiaki

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 460 KB

english, 1986

14

Optimum overlap of electric and optical fields in semiconductor waveguide devices

Adams, M. J., Ritchie, S., Robertson, M. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 418 KB

english, 1986

15

Enhancement of sliding life of MoS2 films deposited by combining sputtering and high-energy ion implantation

Chevallier, Jacques, Olesen, Svend, So̸rensen, Gunnar, Gupta, Balkishan

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 328 KB

english, 1986

16

Selectively buried epitaxial growth of GaAs by metalorganic chemical vapor deposition

Okamoto, Kotaro, Yamaguchi, Ko-ichi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 384 KB

english, 1986

17

In situ investigation of the nucleation of microcrystalline Si

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 424 KB

english, 1986

18

Comparison of buried oxide in silicon by oxygen implantation made by wafer and beam scanning

Mogro-Campero, A., Love, R. P., Lewis, N., Hall, E. L., McConnell, M. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 567 KB

english, 1986

19

Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy

Zembutsu, Sakae, Sasaki, Toru

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 511 KB

english, 1986

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