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Volume 48; Issue 14
Main
Applied Physics Letters
Volume 48; Issue 14
Applied Physics Letters
Volume 48; Issue 14
1
High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range
Srivastava, A. K.
,
DeWinter, J. C.
,
Caneau, C.
,
Pollack, M. A.
,
Zyskind, J. L.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 398 KB
Your tags:
english, 1986
2
Galvanomagnetic properties of lead-telluride quantum wells
Heremans, J.
,
Partin, D. L.
,
Dresselhaus, P. D.
,
Shayegan, M.
,
Drew, H. D.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 513 KB
Your tags:
english, 1986
3
Resonance frequencies of a ring fluxon oscillator
Marchesoni, Fabio
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 458 KB
Your tags:
english, 1986
4
Hydrogenation of the ‘‘new oxygen donor’’ traps in silicon
Hölzlein, K.
,
Pensl, G.
,
Schulz, M.
,
Johnson, N. M.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 521 KB
Your tags:
english, 1986
5
Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy
Hsu, C.
,
Sivananthan, S.
,
Chu, X.
,
Faurie, J. P.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 505 KB
Your tags:
english, 1986
6
GaInAs-InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts
Scholz, F.
,
Wiedemann, P.
,
Benz, K. W.
,
Tränkle, G.
,
Lach, E.
,
Forchel, A.
,
Laube, G.
,
Weidlein, J.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 399 KB
Your tags:
english, 1986
7
Kr2F∗ fluorescence measurements of electron beam pumped KrF laser mixtures
Kimura, W. D.
,
Salesky, E. T.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 502 KB
Your tags:
english, 1986
8
Device quality AlGaAs/GaAs heterostructures grown in a multichamber organometallic vapor phase epitaxial apparatus
Shealy, J. R.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 511 KB
Your tags:
english, 1986
9
Pump intensity dependent cavity mode frequency shifting in a 12.08 μm NH3 laser
Mehendale, S. C.
,
Harrison, R. G.
,
Vass, A.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 368 KB
Your tags:
english, 1986
10
Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocations
Miyazawa, Shintaro
,
Wada, Kazumi
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 429 KB
Your tags:
english, 1986
11
Forward bias induced annealing of the E center in silicon
Barnes, C. E.
,
Samara, G. A.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 372 KB
Your tags:
english, 1986
12
Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers
Casel, A.
,
Jorke, H.
,
Kasper, E.
,
Kibbel, H.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 393 KB
Your tags:
english, 1986
13
Waveguiding in soft x-ray laser experiments
Lunney, James G.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 411 KB
Your tags:
english, 1986
14
Linewidth reduction of 1.5-μm grating loaded external cavity semiconductor laser by geometric reconfiguration
Kuo, Chien-Yu
,
van der Ziel, J. P.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 423 KB
Your tags:
english, 1986
15
Mercury cadmium telluride solar cell with 10.6% efficiency
Basol, Bulent M.
,
Tseng, Eric S.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 403 KB
Your tags:
english, 1986
16
Photoluminescence efficiency recovery due to enhanced annealing of radiation defect in p-type InP by photogenerated carrier recombination
Kamada, H.
,
Ando, K.
,
Yamaguchi, M.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 395 KB
Your tags:
english, 1986
17
Roles of shallow and deep electron traps causing backgating in GaAs metal-semiconductor field-effect transistors
Khanna, Ravi
,
Das, Mukunda B.
Journal:
Applied Physics Letters
Year:
1986
Language:
english
File:
PDF, 498 KB
Your tags:
english, 1986
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