Volume 48; Issue 15

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Applied Physics Letters
Volume 48; Issue 15

Applied Physics Letters

Volume 48; Issue 15

1

Frequency and power limit of quantum well oscillators

Jogai, B., Wang, K. L., Brown, K. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 536 KB

english, 1986

2

Configurationally multistable defect in silicon

Chantre, A., Kimerling, L. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

3

Quadratic electro-optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap

Glick, M., Reinhart, F. K., Weimann, G., Schlapp, W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 497 KB

english, 1986

4

Picosecond recombination of charged carriers in GaAs

McLean, D. G., Roe, M. G., D’Souza, A. I., Wigen, P. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 404 KB

english, 1986

5

High power, high intensity CO infrared laser transmission through As2S3 glass fibers

Sato, Shun-ichi, Watanabe, Shusuke, Fujioka, Tomoo, Saito, Mitsunori, Sakuragi, Shiro

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 426 KB

english, 1986

6

Proton isolated In0.2Ga0.8As/GaAs strained-layer superlattice avalanche photodiode

Bulman, G. E., Myers, D. R., Zipperian, T. E., Dawson, L. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 491 KB

english, 1986

7

Preprocessing heat treatment of metal-insulator-semiconductor solar cells

Wong, Dick Y. F., Lam, Y. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 405 KB

english, 1986

8

Metastability and polarization effects in a pn heterojunction device due to deep states

Stavola, Michael, Capasso, F., Nabity, J. C., Alavi, K., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 492 KB

english, 1986

9

Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells

Voillot, F., Madhukar, A., Kim, J. Y., Chen, P., Cho, N. M., Tang, W. C., Newman, P. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 528 KB

english, 1986

10

Direct frequency modulation of vapor phase transported, distributed feedback semiconductor lasers

Vodhanel, R. S., Cheung, N. K., Koch, T. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 454 KB

english, 1986

11

GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μm

Temkin, H., Pearsall, T. P., Bean, J. C., Logan, R. A., Luryi, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 511 KB

english, 1986

12

Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface

Hoshino, Masataka, Kodama, Kunihiko, Kitahara, Kuninori, Komeno, Junji, Ozeki, Masashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 437 KB

english, 1986

13

Observations of the Rayleigh–Taylor instability in laser imploded microballoons

Wark, J. S., Kilkenny, J. D., Cole, A. J., Key, M. H., Rumsby, P. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 499 KB

english, 1986

14

Polarization switching in a strip grating coupled optically pumped submillimeter laser

Whitbourn, L. B., Macfarlane, J. C., Falconer, I. S., James, B. W., Stimson, P. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

15

Current drift mechanism in In0.53Ga0.47As depletion mode metal-insulator field-effect transistors

Taillepied, M., Gourrier, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 448 KB

english, 1986

16

Amorphous silicon p-i-n-i-p and n-i-p-i-n diodes

Dresner, Joseph

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 408 KB

english, 1986

17

Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

18

Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs

Okada, Yasumasa, Tokumaru, Yozo, Kadota, Yoshinori

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 421 KB

english, 1986

19

Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs

Staudenmann, J.-L., Horning, R. D., Knox, R. D., Arch, D. K., Schmit, J. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 400 KB

english, 1986

20

Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

Gronet, C. M., Sturm, J. C., Williams, K. E., Gibbons, J. F., Wilson, S. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 358 KB

english, 1986

21

Low-temperature annealed contacts to very thin GaAs epilayers

Patrick, W., Mackie, W. S., Beaumont, S. P., Wilkinson, C. D. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 466 KB

english, 1986

22

Visible-laser photodeposition of chromium oxide films and single crystals

Arnone, C., Rothschild, M., Black, J. G., Ehrlich, D. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 560 KB

english, 1986

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