Volume 48; Issue 16

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Applied Physics Letters
Volume 48; Issue 16

Applied Physics Letters

Volume 48; Issue 16

1

1100× optical fiber pulse compression using grating pair and soliton effect at 1.319 μm

Tai, K., Tomita, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

2

Improvement of the bulk laser damage threshold of potassium dihydrogen phosphate crystals by ultraviolet irradiation

Yokotani, A., Sasaki, T., Yoshida, K., Yamanaka, T., Yamanaka, C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 371 KB

english, 1986

3

Long wavelength GaSb photoconductive detectors grown on Si substrates

B. F. Levine, R. J. Malik, C. G. Bethea, J. Walker

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 376 KB

english, 1986

4

Pyroelectric effects in LiNbO3 channel-waveguide devices

Bulmer, C. H., Burns, W. K., Hiser, S. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 423 KB

english, 1986

5

Epitaxial growth of HgTe by precracking metalorganic mercury and tellurium compounds

Wang, C.-H., Lu, P.-Y., Williams, L. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 374 KB

english, 1986

6

Linewidth characteristics of fiber-extended-cavity distributed-feedback lasers

Liou, K.-Y., Jhee, Y. K., Eisenstein, G., Tucker, R. S., Ku, R. T., Shen, T. M., Chakrabarti, U. K., Anthony, P. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 508 KB

english, 1986

7

Spontaneous polarization in organic superlattices

Christie, P., Roberts, G. G., Petty, M. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

8

Pulse diffusion of Ge into GaAs

Lester, S. D., Farley, C. W., Kim, T. S., Streetman, B. G., Anthony, J. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

9

High-speed GaAs/AlGaAs photoconductive detector using a p-modulation-doped multiquantum well structure

Kaede, K., Arakawa, Y., Derry, P., Paslaski, J., Yariv, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 423 KB

english, 1986

10

Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlattices

Matsui, Y., Hayashi, H., Yoshida, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

11

Laser produced percolation structures

Thuillard, M., von Allmen, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

12

Auger depth profiling of Ag layer epitaxially grown on Pb(111) surface: A direct evidence of substrate diffusion

Chen, C. H., Sansalone, F. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 454 KB

english, 1986

13

Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys

Singh, Jasprit, Bajaj, K. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 469 KB

english, 1986

14

Patterned aluminum growth via excimer laser activated metalorganic chemical vapor deposition

Higashi, G. S., Fleming, C. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 464 KB

english, 1986

15

Noninvasive sheet charge density probe for integrated silicon devices

Heinrich, H. K., Bloom, D. M., Hemenway, B. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 427 KB

english, 1986

16

Cesium coverage on molybdenum due to cesium ion bombardment

Tompa, G. S., Carr, W. E., Seidl, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 393 KB

english, 1986

17

dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Henderson, T., Klem, J., Peng, C. K., Gedymin, J. S., Kopp, W., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 390 KB

english, 1986

18

Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1−xCdxTe-CdTe

Reno, J., Sou, I. K., Wijewarnasuriya, P. S., Faurie, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 443 KB

english, 1986

19

Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs

Wagner, J., Seelewind, H., Kaufmann, U.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 411 KB

english, 1986

20

Kinetics of arsenic activation and clustering in high dose implanted silicon

Kamgar, Avid, Baiocchi, F. A., Sheng, T. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

21

Observations of argon emission lines used for fluorine atom actinometry in low power rf discharges

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 390 KB

english, 1986

22

Narrow-stripe metal-clad ridge-waveguide laser for 1.3 μm wavelength

Amann, Markus-Christian, Stegmüller, Bernhard

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 425 KB

english, 1986

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