Volume 48; Issue 18

Applied Physics Letters

Volume 48; Issue 18
1

p-n junction formation using laser induced donors in silicon

Year:
1986
Language:
english
File:
PDF, 516 KB
english, 1986
3

Epitaxial growth of LiInSe2 on {111}A oriented GaP by a hot wall technique

Year:
1986
Language:
english
File:
PDF, 394 KB
english, 1986
11

Transistor action in novel GaAs/W/GaAs structures

Year:
1986
Language:
english
File:
PDF, 469 KB
english, 1986
12

Pulsed CO2 laser etching of polyimide

Year:
1986
Language:
english
File:
PDF, 481 KB
english, 1986
13

Vapor phase epitaxial growth and characterization of InP on GaAs

Year:
1986
Language:
english
File:
PDF, 414 KB
english, 1986
16

X2Σ→B2Σ absorption band of HgBr: Optically pumped 502-nm laser

Year:
1986
Language:
english
File:
PDF, 446 KB
english, 1986