Volume 48; Issue 19

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Applied Physics Letters
Volume 48; Issue 19

Applied Physics Letters

Volume 48; Issue 19

1

High quality CdTe epilayers on GaAs grown by hot‐wall epitaxy

Schikora, D., Sitter, H., Humenberger, J., Lischka, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

2

Optical mapping of residual stress in Czochralski grown GaAs

Dobrilla, P., Blakemore, J. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 561 KB

english, 1986

3

Wave propagation in alternating solid and viscous fluid layers: Size effects in attenuation and dispersion of fast and slow waves

Schoenberg, Michael, Sen, Pabitra N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 514 KB

english, 1986

4

Nd-Fe-B-Co-Al based permanent magnets with improved magnetic properties and temperature characteristics

Mizoguchi, T., Sakai, I., Inomata, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 352 KB

english, 1986

5

Growth of strained-layer semiconductor-metal-semiconductor heterostructures

R. T. Tung, J. M. Gibson, A. F. J. Levi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

6

Capture and emission kinetics of individual Si:SiO2 interface states

Kirton, M. J., Uren, M. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

7

Small-angle scattering of shaley rocks with fractal pore interfaces

Mildner, D. F. R., Rezvani, R., Hall, P. L., Borst, R. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 512 KB

english, 1986

8

Highly efficient waveguide phase modulator for integrated optoelectronics

Alping, A., Wu, X. S., Hausken, T. R., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 498 KB

english, 1986

9

Measurements of x-ray dose required for multiatmospheric pressure CO2 laser discharge

Midorikawa, K., Okada, M., Tashiro, H., Namba, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 479 KB

english, 1986

10

Effect of surface losses on soliton propagation in Josephson junctions

Davidson, A., Pedersen, N. F., Pagano, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

11

Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy

Tsang, W. T., Miller, R. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 531 KB

english, 1986

12

Effect of hydrogen on undoped and lightly Si-doped molecular beam epitaxial GaAs layers

Pao, Yi-Ching, Liu, D., Lee, W. S., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 388 KB

english, 1986

13

Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulators

Juang, F-Y., Singh, Jasprit, Bhattacharya, Pallab K., Bajema, K., Merlin, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 379 KB

english, 1986

14

New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuity

Capasso, F., Allam, J., Cho, A. Y., Mohammed, K., Malik, R. J., Hutchinson, A. L., Sivco, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 474 KB

english, 1986

15

Finite element analysis of the diamond anvil cell: Achieving 4.6 Mbar

Moss, William C., Hallquist, John O., Reichlin, Robin, Goettel, Kenneth A., Martin, Sue

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 401 KB

english, 1986

16

Fabrication of an integrated optical waveguide chemical vapor microsensor by photopolymerization of a bifunctional oligomer

Giuliani, J. F., Kim, K. H., Butler, J. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 339 KB

english, 1986

17

First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Razeghi, M., Maurel, P., Omnés, F., Armor, S. Ben, Dmowski, L., Portal, J. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 370 KB

english, 1986

18

New capping technique for zone-melting recrystallization of silicon-on-insulator films

Chen, C. K., Geis, M. W., Finn, M. C., Tsaur, B-Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 473 KB

english, 1986

19

Ion beam etching and surface characterization of indium phosphide

Bouadma, N., Devoldere, P., Jusserand, B., Ossart, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

20

New phase change material for optical recording with short erase time

Barton, Roger, Davis, Charles R., Rubin, Kurt, Lim, Grace

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 460 KB

english, 1986

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