Volume 48; Issue 2

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Applied Physics Letters
Volume 48; Issue 2

Applied Physics Letters

Volume 48; Issue 2

1

cw helium‐neon Raman laser

Assendrup, J., Grover, B., Hall, L., Jabr, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 449 KB

english, 1986

2

Two‐layer organic photovoltaic cell

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

3

Amorphization of transition metal Zr alloys by mechanical alloying

Hellstern, E., Schultz, L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 424 KB

english, 1986

4

Raman microprobe analysis during the direct laser writing of silicon microstructures

Magnotta, Frank, Herman, Irving P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 614 KB

english, 1986

5

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

McWhorter, P. J., Winokur, P. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 476 KB

english, 1986

6

Simulations of fine structures on the zero field steps of Josephson tunnel junctions

Scheuermann, M., Chi, C. C., Pedersen, N. F., Chang, Jhy-Jiun, Chen, J. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 506 KB

english, 1986

7

Optical absorption of some polymers in the region 240â170 nm

Philipp, H. R., Cole, H. S., Liu, Y. S., Sitnik, T. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 471 KB

english, 1986

8

Hall-effect measurements in p-type InGaAs/GaAs strained-layer superlattices

Fritz, I. J., Dawson, L. R., Drummond, T. J., Schirber, J. E., Biefeld, R. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 438 KB

english, 1986

9

New efficient phosphor material ZnS:Sm,P for red electroluminescent devices

Tohda, T., Fujita, Y., Matsuoka, T., Abe, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 323 KB

english, 1986

10

Growth law for disk precipitates, and oxygen precipitation in silicon

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 485 KB

english, 1986

11

Selective-area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

Hong, J. M., Wang, S., Sands, T., Washburn, J., Flood, J. D., Merz, J. L., Low, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 512 KB

english, 1986

12

Greatly reduced losses for small-radius bends in Ti:LiNbO3 waveguides

Korotky, S. K., Marcatili, E. A. J., Veselka, J. J., Bosworth, R. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 454 KB

english, 1986

13

Generation and detection of 15-ps light pulses in the 1.2–1.3-μm wavelength range by semiconductor lasers and detectors

Bimberg, D., Böttcher, E. H., Ketterer, K., Vollmer, H. P., Beneking, H., Roentgen, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 506 KB

english, 1986

14

Microcrystalline to amorphous transition in silicon from microwave plasmas

Schellenberg, J. J., McLeod, R. D., Mejia, S. R., Card, H. C., Kao, K. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 422 KB

english, 1986

15

Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

Yao, Takafumi, Takeda, Toshihiko

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 503 KB

english, 1986

16

Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy

Kelting, K., Koehler, K., Zwicknagl, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

17

Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self-interstitial phenomena

Morehead, F. F., Lever, R. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 510 KB

english, 1986

18

Temperature and x-ray intensity scaling in KrF laser plasma interaction

Gupta, P. D., Popil, R., Fedosejevs, R., Offenberger, A. A., Salzmann, D., Capjack, C. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 494 KB

english, 1986

19

Laser selective deposition of GaAs on Si

Bedair, S. M., Whisnant, J. K., Karam, N. H., Tischler, M. A., Katsuyama, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 485 KB

english, 1986

20

Superior characteristics of nitridized thermal oxide grown on polycrystalline silicon

Chen, Chiou-Feng, Wu, Ching-Yuan

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 438 KB

english, 1986

21

Selective growth of InP buried structure by chloride vapor phase epitaxy

Hoshino, Masataka, Tanaka, Kazuhiro, Komeno, Junji, Kitahara, Kuninori, Kodama, Kunihiko, Ozeki, Masashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 496 KB

english, 1986

22

Studies of laser-generated ultrasonic waveforms at different orientations

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 411 KB

english, 1986

23

〈100〉 and 〈111〉 textures in unseeded, strip heater recrystallized silicon-on-insulator

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

24

Optical studies of hydrogenated amorphous carbon plasma deposition

Wagner, J., Wild, Ch., Pohl, F., Koidl, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

25

Picosecond time-of-flight measurements of minority electrons in GaAs/AlGaAs quantum well structures

Höpfel, R. A., Shah, J., Block, D., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 450 KB

english, 1986

26

Zone refining and enhancement of solid phase epitaxial growth rates in Au-implanted amorphous Si

Jacobson, D. C., Poate, J. M., Olson, G. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 407 KB

english, 1986

27

Modeling and observation of photoconductivity in polycrystalline silicon

Singh, P. K., Singh, S. N., Kishore, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

28

Polydimethylsiloxane flow defined for experiments in fluid dynamics

Weijermars, Ruud

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

29

Tunneling microscopy of graphite in air

Park, Sang-Il, Quate, C. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 544 KB

english, 1986

30

Location of positive charge trapped near the Si-SiO2 interface at low temperature

Chang, S. T., Lyon, S. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

31

Acceleration sensitivity of surface acoustic wave resonators

Tiersten, H. F., Stevens, D. S., Weglein, R. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 405 KB

english, 1986

32

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2

Krusin-Elbaum, L., Sai-Halasz, G. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 401 KB

english, 1986

33

Shallow p-type layers in InP by Hg implantation

Favennec, P. N., L’Haridon, H., Roquais, J. M., Salvi, M., Le Cleach, X., Gouskov, L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 387 KB

english, 1986

34

Fabrication of arrays of GaAs optical bistable devices

Venkatesan, T., Wilkens, B., Lee, Y. H., Warren, M., Olbright, G., Gibbs, H. M., Peyghambarian, N., Smith, J. S., Yariv, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 446 KB

english, 1986

35

Ring-shaped domain effective for the Bloch line memory

Hidaka, Yasuharu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 490 KB

english, 1986

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