Volume 48; Issue 21

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Applied Physics Letters
Volume 48; Issue 21

Applied Physics Letters

Volume 48; Issue 21

1

Analysis of switching transients in KNO3 ferroelectric memories

Araujo, C., Scott, J. F., Godfrey, R. Bruce, McMillan, L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 373 KB

english, 1986

2

Rutherford backscattering study of the photodissolution of Ag in amorphous GeSe2

Rennie, J., Elliott, S. R., Jeynes, C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 497 KB

english, 1986

3

Direct measurement of the electric-field-dependent absorption coefficient in GaAs/AlGaAs multiple quantum wells

Wood, Thomas H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

4

Two-dimensional metastable magnetic semiconductor structures

Kolodziejski, L. A., Gunshor, R. L., Otsuka, N., Gu, B. P., Hefetz, Y., Nurmikko, A. V.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 495 KB

english, 1986

5

Transmission electron microscopic observations of amorphous NiZr alloy formation by solid-state reaction

Newcomb, S. B., Tu, K. N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 452 KB

english, 1986

6

SiO2 buried layer formation by subcritical dose oxygen ion implantation

Stoemenos, J., Margail, J., Jaussaud, C., Dupuy, M., Bruel, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 565 KB

english, 1986

7

Phase locked narrow zinc diffused stripe laser arrays

Zmudzinski, C. A., Mawst, L. J., Givens, M. E., Emanuel, M. A., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 450 KB

english, 1986

8

GaInAs/GaAs strained-layer superlattices grown by low pressure metalorganic vapor phase epitaxy

Roth, A. P., Sacilotti, M., Masut, R. A., D’Arcy, P. J., Watt, B., Sproule, G. I., Mitchell, D. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

9

Comparison of crystal orientation dependence for the solid phase epitaxial process in ion implanted Si and GaAs

Licoppe, C., Nissim, Y. I., Henoc, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 534 KB

english, 1986

10

Coherent instabilities in p-i-n avalanche GaAs diodes up to submillimeter frequency range

Lippens, D., Nieruchalski, J. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 486 KB

english, 1986

11

Optoelectronic integrated AlGaAs/GaAs p-i-n/field-effect transistor with an embedded, planar p-i-n photodiode

Miura, S., Wada, O., Makiuchi, M., Nakai, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

12

Dopant redistribution during Pd2Si formation using rapid thermal annealing

Alvi, N. S., Kwong, D. L., Hopkins, C. G., Bauman, S. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 517 KB

english, 1986

13

InGaAs/InP p-i-n photodiodes grown by chemical beam epitaxy

Tsang, W. T., Campbell, J. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 461 KB

english, 1986

14

Negative differential resistances from Hg1−xCdxTe-CdTe single quantum barrier heterostructures

Chow, D. H., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 459 KB

english, 1986

15

Absence of Fermi level pinning at metal-InxGa1−xAs(100) interfaces

Brillson, L. J., Slade, M. L., Viturro, R. E., Kelly, M. K., Tache, N., Margaritondo, G., Woodall, J. M., Kirchner, P. D., Pettit, G. D., Wright, S. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 551 KB

english, 1986

16

Deposition of oriented zinc oxide on an optical fiber

Heffner, B. L., Khuri-Yakub, B. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 389 KB

english, 1986

17

Magnetostatic hole modes

Peuzin, J. C., Gay, J. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 390 KB

english, 1986

18

Superlattice GaAs mixed tunneling avalanche transit time device structure

Christou, A., Varmazis, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 382 KB

english, 1986

19

Rapid thermal annealing of Mg++As+ dual implants in GaAs

Patel, Kalpesh K., Sealy, Brian J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 376 KB

english, 1986

20

Growth of GaN films using trimethylgallium and hydrazine

Gaskill, D. K., Bottka, N., Lin, M. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 421 KB

english, 1986

21

Luminescence investigations of highly strained-layer InAs-GaAs superlattices

Voisin, P., Voos, M., Marzin, J. Y., Tamargo, M. C., Nahory, R. E., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 383 KB

english, 1986

22

Low-temperature elastic properties of the permanent magnet compound Nd2Fe14B

Dadon, D., Dariel, M. P., Gefen, Y., Klimker, H., Rosen, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 352 KB

english, 1986

23

Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

Pinto, R., Babu, R. Sachidananda, Bhattacharya, P. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 402 KB

english, 1986

24

Optical properties of InGaAs-InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition

Skolnick, M. S., Tapster, P. R., Bass, S. J., Apsley, N., Pitt, A. D., Chew, N. G., Cullis, A. G., Aldred, S. P., Warwick, C. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 541 KB

english, 1986

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