Volume 48; Issue 22

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Applied Physics Letters
Volume 48; Issue 22

Applied Physics Letters

Volume 48; Issue 22

1

Surface relaxation and pore sizes in rocksâa nuclear magnetic resonance analysis

Lipsicas, Max, Banavar, Jayanth R., Willemsen, Jorge

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

2

Interelement coupling in gain-guided diode laser arrays

Hohimer, J. P., Hadley, G. R., Owyoung, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 497 KB

english, 1986

3

Infrared absorption in PtSi-Si interface states

Flohr, Th., Schulz, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 423 KB

english, 1986

4

Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells

Jeffrey, F. R., Vernstrom, G. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 420 KB

english, 1986

5

Low-loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As-GaAs superlattices

Das, Utpal, Bhattacharya, Pallab K., Dhar, Sunanda

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 454 KB

english, 1986

6

Influence of the donor depth on the determination of the band discontinuity of isotype heterojunctions by the capacitance-voltage technique

’t Hooft, G. W., Colak, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 491 KB

english, 1986

7

Oxygen isotope effect on the 889 cm−1 band in silicon

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 422 KB

english, 1986

8

Formation of (100)GaAs on (100) silicon by laser recrystallization

Christou, A., Efthimiopoulos, T., Kiriakidis, G., Varmazis, C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 465 KB

english, 1986

9

Electrical and optical nonuniformity of Si-implanted and rapid thermal annealed InP:Fe

Rao, Mulpuri V.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 503 KB

english, 1986

10

New correlation technique for measuring short electrical pulses with picosecond time resolution

Paulus, P., Jäger, D., Pfeiffer, Th., Kuhl, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

11

Distributions of hole and electron trapping centers in SiO2 film on Si, and the relation with the electrostatic tribo electrification phenomena of quartz

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 333 KB

english, 1986

12

Effect of dose rate on ion beam mixing in Nb-Si

Banwell, Thomas, Nicolet, M-A., Averback, R. S., Thompson, L. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 421 KB

english, 1986

13

Formation of bubbles in BF+2-implanted silicon

Nieh, C. W., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

14

Charge carrier dynamics of a CO2 laser plasma in a magnetized cathode glow

Razdan, R., Capjack, C. E., Seguin, H. J. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 377 KB

english, 1986

15

Organometallic vapor phase epitaxial growth of InP using new phosphorus sources

Larsen, C. A., Chen, C. H., Kitamura, M., Stringfellow, G. B., Brown, D. W., Robertson, A. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 403 KB

english, 1986

16

3C-SiC p-n junction diodes

Furukawa, K., Uemoto, A., Shigeta, M., Suzuki, A., Nakajima, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 380 KB

english, 1986

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