Volume 48; Issue 24

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Applied Physics Letters
Volume 48; Issue 24

Applied Physics Letters

Volume 48; Issue 24

1

Improved performance of the discharge pumped HgBr and HgCl lasers by adding SF6

Sugii, M., Sasaki, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 437 KB

english, 1986

2

Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface

Windhorn, T. H., Goodhue, W. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

3

Electron traps in dislocation-free In-alloyed liquid encapsulated Czochralski GaAs and their annealing properties

Kitagawara, Y., Noto, N., Takahashi, T., Takenaka, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 409 KB

english, 1986

4

Radiation effects on phase separation and viscosity in a B2O3-PbO glass

Biron, Isabelle, Barbu, Alain

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 466 KB

english, 1986

5

Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers

Walpole, J. N., Liau, Z. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 445 KB

english, 1986

6

Titanium-doped semi-insulating InP grown by the liquid encapsulated Czochralski method

Iseler, G. W., Ahern, Brian S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

7

Temperature dependence for the onset of plastic yield in undoped and indium-doped GaAs

Hobgood, H. M., McGuigan, S., Spitznagel, J. A., Thomas, R. N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 431 KB

english, 1986

8

Fast and slow states at the interface of amorphous silicon and silicon nitride

Street, R. A., Tsai, C. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 470 KB

english, 1986

9

Atomic structures at IrSi(IrGe)/Ir(001) interfaces

Liu, H. F., Liu, H. M., Tsong, T. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 513 KB

english, 1986

10

Erratum: Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance device [Appl. Phys. Lett. 47, 1347 (1985)]

Luryi, Serge, Capasso, Federico

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 215 KB

english, 1986

11

Erratum: Preparation and electrical properties of InPxOy gate insulators on InP [Appl. Phys. Lett. 48, 375 (1986)]

Chang, H. L., Meiners, L. G., Sa, C. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 214 KB

english, 1986

12

Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

Ray, S., Ruden, P., Sokolov, V., Kolbas, R., Boonstra, T., Williams, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 424 KB

english, 1986

13

Millimeter wave absorption and refraction in tungsten bronze ferroelectrics

Bobbs, Bradley, Matloubian, Mehran, Fetterman, Harold R., Neurgaonkar, Ratnakar R., Cory, Warren K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

14

Surface solidification and impurity segregation in amorphous silicon

Peercy, P. S., Poate, J. M., Thompson, Michael O., Tsao, J. Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

15

Ambient and dopant effects on boron diffusion in oxides

Wong, C. Y., Lai, F. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 415 KB

english, 1986

16

Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells

Fritz, I. J., Drummond, T. J., Osbourn, G. C., Schirber, J. E., Jones, E. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 383 KB

english, 1986

17

Measurement of electrical characteristics and electron density in a fast discharge pumped XeCl excimer laser

Ford, J. E., Meyer, J., Houtman, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 373 KB

english, 1986

18

Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

Toyoda, H., Sugai, H., Kato, K., Yoshida, A., Okuda, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

19

HgTe-CdTe double barrier tunneling structures

Schulman, J. N., Anderson, C. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 494 KB

english, 1986

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