Volume 48; Issue 26

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Applied Physics Letters
Volume 48; Issue 26

Applied Physics Letters

Volume 48; Issue 26

1

Schottky barrier heights of Hg, Cd, and Zn on n-type InP(100)

Sa, C. J., Meiners, L. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 536 KB

english, 1986

2

100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

Lin, T. L., Chen, S. C., Kao, Y. C., Wang, K. L., Iyer, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 517 KB

english, 1986

3

Reformulation of atom location by channeling enhanced microanalysis

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 319 KB

english, 1986

4

InGaAs/InAlAs hot-electron transistor

Reddy, U. K., Chen, J., Peng, C. K., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

5

Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals

Larsen, A. Nylandsted, Shiryaev, S. Yu., So̸rensen, E. Schwartz, Tidemand-Petersson, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 483 KB

english, 1986

6

Observation of double light pulses in thin-film ZnS:Mn electroluminescent devices

Bringuier, E., Geoffroy, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 432 KB

english, 1986

7

Influence of the circuit impedance on an electron beam controlled diffuse discharge with a negative differential conductivity

Schaefer, G., Schoenbach, K. H., Kristiansen, M., Strickland, B. E., Korzekwa, R. A., Hutcheson, G. Z.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 444 KB

english, 1986

8

Growth of GaAs by switched laser metalorganic vapor phase epitaxy

Doi, Atsutoshi, Aoyagi, Yoshinobu, Namba, Susumu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 464 KB

english, 1986

9

Nb3Sn(Ti) powder metallurgy processed high field superconductors

Pourrahimi, S., Thieme, C. L. H., Foner, S., Suenaga, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 435 KB

english, 1986

10

Erratum: Nanometer molecular lithography [Appl. Phys. Lett. 48, 676 (1986)]

Douglas, Kenneth, Clark, Noel A., Rothschild, Kenneth J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 250 KB

english, 1986

11

Metals on cadmium telluride: Schottky barriers and interface reactions

Dharmadasa, I. M., Herrenden-Harker, W. G., Williams, R. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 478 KB

english, 1986

12

Erratum: Noninvasive sheet charge density probe for integrated silicon devices [Appl. Phys. Lett. 48, 1066 (1986)]

Heinrich, H. K., Bloom, D. M., Hemenway, B. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 218 KB

english, 1986

13

Measurement of excited-state densities during high-current operation of a hydrogen thyratron using laser-induced fluorescence

Erwin, D. A., Gundersen, M. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 445 KB

english, 1986

14

Chemical etching for the evaluation of hydrogenated amorphous silicon films

Chu, T. L., Chu, Shirley S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 427 KB

english, 1986

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