Volume 48; Issue 3

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Applied Physics Letters
Volume 48; Issue 3

Applied Physics Letters

Volume 48; Issue 3

1

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Ishikawa, Masayuki, Ohba, Yasuo, Sugawara, Hideto, Yamamoto, Motoyuki, Nakanisi, Takatosi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 397 KB

english, 1986

2

Velocity distribution of molecular fragments from polymethylmethacrylate irradiated with UV laser pulses

Danielzik, B., Fabricius, N., RoÌwekamp, M., von der Linde, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 500 KB

english, 1986

3

Crosstalk of the dynamical dissipative behavior between different parts in a current-carrying semiconductor

RoÌhricht, B., Wessely, B., Parisi, J., Peinke, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 564 KB

english, 1986

4

Nitrogen effect on oxygen precipitation in Czochralski silicon

Shimura, F., Hockett, R. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 487 KB

english, 1986

5

Nonlinear photothermal imaging

Rajakarunanayake, Y. N., Wickramasinghe, H. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 524 KB

english, 1986

6

20% efficiency silicon solar cells

Blakers, A. W., Green, M. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 502 KB

english, 1986

7

Electron-hole recombination at the Si-SiO2 interface

Yablonovitch, E., Swanson, R. M., Eades, W. D., Weinberger, B. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 505 KB

english, 1986

8

Double-crystal x-ray topographic studies of bulk and epitaxially grown ZnxCd1−xTe (0.0≤x≤0.06)

Qadri, Syed B., Fatemi, M., Dinan, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 466 KB

english, 1986

9

Boron doping in Si molecular beam epitaxy by co-evaporation of B2O3 or doped silicon

Ostrom, R. M., Allen, F. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 524 KB

english, 1986

10

Self-aligned contact process for Nb/Al-AlOx/Nb Josephson junctions

Morohashi, Shin’ichi, Hasuo, Shinya, Yamaoka, Toyoshi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 468 KB

english, 1986

11

Reactive ion beam etching of InP with N2 and N2/O2 mixtures

Katzschner, W., Niggebrügge, U., Löffler, R., Schröter-Janssen, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 446 KB

english, 1986

12

Universal expressions of projected range and damage distributions

Kido, Yoshiaki, Kawamoto, Junichi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 420 KB

english, 1986

13

A 1.55-μm semiconductor-optical fiber ring laser

Jopson, R. M., Eisenstein, G., Whalen, M. S., Hall, K. L., Koren, U., Simpson, J. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 454 KB

english, 1986

14

Capacitance and conductance deep level transient spectroscopy in field-effect transistors

Hawkins, I. D., Peaker, A. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 375 KB

english, 1986

15

Real time image subtraction and ‘‘exclusive or’’ operation using a self-pumped phase conjugate mirror

Kwong, Sze-Keung, Rakuljic, George A., Yariv, Amnon

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 459 KB

english, 1986

16

Photopumped laser operation of GaAs doping superlattices

Vojak, B. A., Zajac, G. W., Chambers, F. A., Meese, J. M., Chumbley, P. E., Kaliski, R. W., Holonyak, N., Nam, D. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 399 KB

english, 1986

17

Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAs

Feldman, R. D., Austin, R. F., Kisker, D. W., Jeffers, K. S., Bridenbaugh, P. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 515 KB

english, 1986

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