Volume 48; Issue 4

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Applied Physics Letters
Volume 48; Issue 4

Applied Physics Letters

Volume 48; Issue 4

1

Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

M. Kobayashi, N. Mino, H. Katagiri, R. Kimura, M. Konagai, K. Takahashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 426 KB

english, 1986

2

Theoretical study of a 16-μm CO2 downstream-mixing gasdynamic laser: A two-dimensional approach

Chakravarthy, Purandar, Reddy, N. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 425 KB

english, 1986

3

Deep level defect study of molecular beam epitaxially grown silicon films

Xie, Y. H., Wu, Y. Y., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 422 KB

english, 1986

4

GaSe detectors for x-ray beams

Castellano, Alfredo

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 366 KB

english, 1986

5

Low-temperature nuclear magnetic resonance with a dc SQUID amplifier

Freeman, M. R., Germain, R. S., Richardson, R. C., Roukes, M. L., Gallagher, W. J., Ketchen, M. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

6

Nonlinear optical coupling to planar GaAs/AlGaAs waveguides

Chen, Y. J., Carter, G. M., Sonek, G. J., Ballantyne, J. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 455 KB

english, 1986

7

Magnetically tunable diluted magnetic semiconductor (Cd, Mn)Te quantum well laser

Isaacs, E. D., Heiman, D., Zayhowski, J. J., Bicknell, R. N., Schetzina, J. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 464 KB

english, 1986

8

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth

Juang, F-Y., Bhattacharya, P. K., Singh, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 497 KB

english, 1986

9

Ion beam mixing in the Al/NixAl1−x/Ni system

Rimini, E., Nastasi, M., Liu, J., Barbour, J. C., Hirvonen, J-P., Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 426 KB

english, 1986

10

High efficiency multikilojoule HF chemical lasers using an electron beam initiated low-pressure mixture of H2/F2/NF3 or H2/F2/SF6

Kannari, Fumihiko, Inagaki, Hirohito, Obara, Minoru

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 372 KB

english, 1986

11

Direct measurements of liquid/solid interface kinetics during pulsed-laser-induced melting of aluminum

Tsao, J. Y., Picraux, S. T., Peercy, P. S., Thompson, Michael O.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

12

Effects of buffer layers in GaAs-In0.2Al0.8As strained-layer superlattices

Nakayama, M., Kubota, K., Kato, H., Chika, S., Sano, N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 460 KB

english, 1986

13

Spectral characterization of epitaxial crystal layers, using a fiber stimulated Raman light generator as light source

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

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