Volume 48; Issue 5

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Applied Physics Letters
Volume 48; Issue 5

Applied Physics Letters

Volume 48; Issue 5

1

Characteristics and mechanism of 1/f noise in GaAs Schottky barrier field-effect transistors

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 221 KB

english, 1986

2

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Amano, H., Sawaki, N., Akasaki, I., Toyoda, Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 411 KB

english, 1986

3

Stacking faults in WSi2: Resistivity effects

d’Heurle, F. M., LeGoues, F. K., Joshi, R., Suni, Ilka

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 419 KB

english, 1986

4

Surface-energy-driven secondary grain growth in thin Au films

Wong, Chee C., Smith, Henry I., Thompson, C. V.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 511 KB

english, 1986

5

Variable barrier height semiconductor/HxWO3 diodes

Rauh, R. D., Rose, T. L., Benoit, S. N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 468 KB

english, 1986

6

InGaAsP ridge waveguide laser array with nonuniform spacing

Dutta, N. K., Koszi, L. A., Segner, B. P., Napholtz, S. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 433 KB

english, 1986

7

Measurement of the minority-carrier lifetime and injection efficiency in AlGaAs/GaAs heterojunction bipolar transistors

Chand, Naresh, Fischer, Russ, Henderson, Tim, Morkoç, Hadis, Neugroschel, Arnost

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 519 KB

english, 1986

8

Capacitance-voltage and current-voltage characteristics of molecular beam epitaxially grown p+-GaAs/AlAs/n-GaAs heterostructures

Cooper, J. A., Qian, Q-D., Melloch, M. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

9

Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb

van der Ziel, J. P., Chiu, T. H., Tsang, W. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

10

Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors

Ghosh, Ruby N., Griffing, Bruce, Ballantyne, Joseph M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 395 KB

english, 1986

11

Phase insensitive detection of laser-generated ultrasound

Hutchins, D. A., Page, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 472 KB

english, 1986

12

Localized epitaxial growth of MnSi1.7 on silicon

Lian, Y. C., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 501 KB

english, 1986

13

Exciton formation and energy exchange with d-electron states in ZnSe/(Zn,Mn)Se multiple quantum wells

Hefetz, Y., Goltsos, W. C., Nurmikko, A. V., Kolodziejski, L. A., Gunshor, R. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 503 KB

english, 1986

14

Nitrogen related doping with implant Si3N4 formation in Si

Davies, D. Eirug, Adamski, Joseph A., Kennedy, E. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

15

Femtojoule optical switching in nonlinear semiconductor laser amplifiers

Sharfin, W. F., Dagenais, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 362 KB

english, 1986

16

Preparation and electrical properties of InPxOy gate insulators on InP

Chang, H. L., Meiners, L. G., Sa, C. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 394 KB

english, 1986

17

Formation of a new deep emission in Si+, S+, Se+, and Te+ ion-implanted GaAs

Makita, Yunosuke, Takeuchi, Yoshinori, Nomura, Toshio, Tanaka, Hideki, Kanayama, Toshihiko, Tanoue, Hisao, Irie, Katsuhiro, Ohnishi, Nobukazu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

18

In situ observation of lamp zone melting of Si films on patterned SiO2

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

19

50× optical fiber pulse compression at 1.319 μm

Tai, K., Tomita, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 417 KB

english, 1986

20

Distinction between near infrared optical absorption and light scattering in semi-insulating GaAs

Skolnick, M. S., Brozel, M. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 554 KB

english, 1986

21

Lateral impurity transport in silicon films on insulators during laser recrystallization

Sugahara, K., Nishimura, T., Akasaka, Y., Nakata, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 471 KB

english, 1986

22

Phase selection during pulsed laser annealing of manganese

Follstaedt, D. M., Peercy, P. S., Perepezko, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 538 KB

english, 1986

23

Expanding beam concept for building very large excimer laser amplifiers

Jacob, J. H., Rokni, M., Klinkowstein, R. E., Singer, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 410 KB

english, 1986

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