Volume 49; Issue 14

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Applied Physics Letters
Volume 49; Issue 14

Applied Physics Letters

Volume 49; Issue 14

1

Nanosecond switching of bistable ZnSe interference filters at room temperature

Bigot, J. Y., Daunois, A., Leonelli, R., Sence, M., Mathew, J. G. H., Smith, S. D., Walker, A. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

2

N2 excited state absorption in XeF lasers

Mandl, A., Hyman, H. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

3

Electrical behavior of fast neutron irradiated semi-insulating GaAs during thermal recovery

Goltzené, A., Schwab, C., David, J. P., Roizes, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

4

Study of deep level centers at excited states in GaP by means of transient optical absorption spectroscopy

Shibata, Hiromasa, Eshita, Takeshi, Tanimura, Katsumi, Itoh, Noriaki, Hayashi, Yoshikazu, Yoneda, Kiyoshi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 502 KB

english, 1986

5

Gas-sensitive electrical conduction observed in a locally discontinuous Au thin film

Yasuda, Tetsuji, Komiyama, Hiroshi, Tanaka, Kazunobu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 464 KB

english, 1986

6

Direct imaging of Au and Ag clusters by scanning tunneling microscopy

Abraham, David W., Sattler, Klaus, Ganz, Eric, Mamin, H. Jonathon, Thomson, Ruth Ellen, Clarke, John

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 563 KB

english, 1986

7

Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy

Aina, Leye, Mattingly, Mike, Pande, Krishna

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

8

Laser direct writing of single-crystal III-V compounds on GaAs

Karam, N. H., El-Masry, N. A., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 478 KB

english, 1986

9

InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy

Temkin, H., Panish, M. B., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 463 KB

english, 1986

10

Wavelength shift of the ruby luminescence R lines under shock compression

Horn, P. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 467 KB

english, 1986

11

Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering

Yang, Y. J., Lo, Y. C., Lee, G. S., Hsieh, K. Y., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 413 KB

english, 1986

12

Enhanced injection at silicon-rich oxide interfaces

Chang, K-T., Rose, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 407 KB

english, 1986

13

Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering

Abelson, J. R., Tsai, C. C., Sigmon, T. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 464 KB

english, 1986

14

Energy relaxation of two-dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions

Hirakawa, K., Sakaki, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 435 KB

english, 1986

15

Boron oxide interaction with silicon in silicon molecular beam epitaxy

de Frésart, E., Rhee, S. S., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 398 KB

english, 1986

16

Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

Lagowski, J., Gatos, H. C., Kang, C. H., Skowronski, M., Ko, K. Y., Lin, D. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 405 KB

english, 1986

17

Proposal for superstructure based high efficiency photovoltaics

Wagner, M., Leburton, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 523 KB

english, 1986

18

Single-mode single-lobe operation of broad area AlxGa1−xAs-GaAs quantum well lasers

Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 540 KB

english, 1986

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