Volume 49; Issue 15

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Applied Physics Letters
Volume 49; Issue 15

Applied Physics Letters

Volume 49; Issue 15

1

Strain relief in epitaxial fluoride buffer layers for semiconductor heteroepitaxy

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 523 KB

english, 1986

2

68.4‐T‐long pulse magnet: Test of high strength microcomposite Cu/Nb conductor

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 472 KB

english, 1986

3

Magnetic properties of cobalt nitride thin films

Matsuoka, Morito, Ono, Kenâichi, Inukai, Takashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 382 KB

english, 1986

4

Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon

Jackson, W. B., Stutzmann, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

5

Electro-optic and dielectric properties of KTiOPO4

Bierlein, J. D., Arweiler, C. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 513 KB

english, 1986

6

Correlation of stress with light-induced defects in hydrogenated amorphous silicon films

Kurtz, Sarah R., Tsuo, Y. Simon, Tsu, Raphael

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 487 KB

english, 1986

7

Damage calculation and measurement for GaAs amorphized by Si implantation

Opyd, W. G., Gibbons, J. F., Bravman, J. C., Parker, M. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 525 KB

english, 1986

8

Anomalous distance dependence in scanning tunneling microscopy

Bryant, A., Smith, D. P. E., Binnig, G., Harrison, W. A., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 532 KB

english, 1986

9

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

Bedair, S. M., Humphreys, T. P., El-Masry, N. A., Lo, Y., Hamaguchi, N., Lamp, C. D., Tuttle, A. A., Dreifus, D. L., Russell, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 495 KB

english, 1986

10

High-speed response of a quasi-graded band-gap superlattice p-i-n photodiode

Parker, D. G., Couch, N. R., Kelly, M. J., Kerr, T. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

11

Compact room-temperature metal vapor laser

Anders, A. K., Harvey, E. C., Tobin, R. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 377 KB

english, 1986

12

Surface structure of GaAs with adsorbed Te

Feldman, R. D., Austin, R. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 490 KB

english, 1986

13

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

Leon, R. P., Bailey, S. G., Mazaris, G. A., Williams, W. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 462 KB

english, 1986

14

Observation of Néel structure walls on the surface of 1.4-μm-thick magnetic films using spin-polarized scanning electron microscopy

Koike, K., Matsuyama, H., Hayakawa, K., Mitsuoka, K., Narishige, S., Sugita, Y., Shiiki, K., Saka, C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 382 KB

english, 1986

15

Layer-dependent laser sputtering of BaF2 (111)

Reif, J., Fallgren, H., Nielsen, H. B., Matthias, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 362 KB

english, 1986

16

Hydrogen-free SiN films deposited by ion beam sputtering

Kitabatake, Makoto, Wasa, Kiyotaka

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 368 KB

english, 1986

17

Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy

Chen, C. H., Kitamura, M., Cohen, R. M., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 403 KB

english, 1986

18

Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the photodecomposition of SiH4 using an ArF excimer laser

Taguchi, Toshihiro, Morikawa, Masato, Hiratsuka, Yasuyuki, Toyoda, Koichi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 401 KB

english, 1986

19

Simple laser-driven, metal-photocathode electron source

Downey, S. W., Builta, L. A., Moir, D. C., Ringler, T. J., Saunders, J. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 401 KB

english, 1986

20

Broadband and high-reflectivity mirror using (Al,Ga)As/(Ca,Sr)F2 multilayer structures grown by molecular beam epitaxy

Tu, C. W., Ajuria, S. A., Temkin, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 418 KB

english, 1986

21

Erratum: Delta-doped ohmic contacts to n-GaAs [Appl. Phys. Lett. 49, 292 (1986)]

Schubert, E. F., Cunningham, J. E., Tsang, W. T., Chiu, T. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 202 KB

english, 1986

22

Amorphous thin films of Zn3P2: Preparation and characterization

Deiss, J. L., Elidrissi, B., Robino, M., Weil, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 372 KB

english, 1986

23

Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

Tsang, W. T., Chang, A. M., Ditzenberger, J. A., Tabatabaie, N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 460 KB

english, 1986

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