Volume 49; Issue 17

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Applied Physics Letters
Volume 49; Issue 17

Applied Physics Letters

Volume 49; Issue 17

1

Optical probing of the mechanical impulse response of a transducer

Royer, D., Dieulesaint, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

2

Frequency-dependent Faraday rotation in CdMnTe

Butler, M. A., Martin, S. J., Baughman, R. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 498 KB

english, 1986

3

Rotating ring fluxon oscillators: Gyroscopic effects

Marchesoni, Fabio

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 418 KB

english, 1986

4

Compact polarisation reconfigurable printed monopole antenna at 2.4 GHz

Hassani, H.R., Amini, M.H.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

5

Solid neon moderator for producing slow positrons

Mills, A. P., Gullikson, E. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 495 KB

english, 1986

6

Large room-temperature effects from resonant tunneling through AlAs barriers

Goodhue, W. D., Sollner, T. C. L. G., Le, H. Q., Brown, E. R., Vojak, B. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 529 KB

english, 1986

7

Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materials

Gourley, P. L., Drummond, T. J., Doyle, B. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 541 KB

english, 1986

8

New silicon-on-insulator technology using a two-step oxidation technique

Lin, T. L., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 527 KB

english, 1986

9

Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition

Kong, H. S., Glass, J. T., Davis, R. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 536 KB

english, 1986

10

X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions

Kamigaki, K., Sakashita, H., Kato, H., Nakayama, M., Sano, N., Terauchi, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

11

Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxy

Bicknell, R. N., Giles, N. C., Schetzina, J. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 438 KB

english, 1986

12

Ordering of oxide precipitates in oxygen implanted silicon

van Ommen, A. H., Koek, B. H., Viegers, M. P. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 439 KB

english, 1986

13

Characterization of individual electron traps in amorphous Si by telegraph noise spectroscopy

Rogers, C. T., Buhrman, R. A., Kroger, H., Smith, L. N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 462 KB

english, 1986

14

Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy

Chiu, T. H., Tsang, W. T., Ditzenberger, J. A., van der Ziel, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 354 KB

english, 1986

15

Ohmic contact control in modulation-doped gallium arsenide field-effect transistors

Christou, A., Efthimiopoulos, T., Hatsopoulos, Z.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 373 KB

english, 1986

16

Very low noise, tightly coupled, dc SQUID amplifiers

Muhlfelder, B., Beall, J. A., Cromar, M. W., Ono, R. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 434 KB

english, 1986

17

Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide

Dey, S., Torgeson, D. R., Barnes, R. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 399 KB

english, 1986

18

Optically induced far-infrared absorption from residual acceptors in as-grown GaAs

Wagner, J., Seelewind, H., Koidl, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 369 KB

english, 1986

19

Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure

Dautremont-Smith, W. C., Nabity, J. C., Swaminathan, V., Stavola, Michael, Chevallier, J., Tu, C. W., Pearton, S. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

20

Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

Razeghi, M., Nagle, J., Maurel, P., Omnes, F., Pocholle, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 373 KB

english, 1986

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