Volume 49; Issue 18

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Applied Physics Letters
Volume 49; Issue 18

Applied Physics Letters

Volume 49; Issue 18

1

Tunneling microscopy in an electrochemical cell: Images of Ag plating

Sonnenfeld, Richard, Schardt, Bruce C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 620 KB

english, 1986

2

Macromolecular electronic device: Field-effect transistor with a polythiophene thin film

Tsumura, A., Koezuka, H., Ando, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 517 KB

english, 1986

3

Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

Tischler, M. A., Anderson, N. G., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 398 KB

english, 1986

4

Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon

Bruines, J. J. P., van Hal, R. P. M., Boots, H. M. J., Polman, A., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 514 KB

english, 1986

5

Glass forming ability in mechanically alloyed Fe-Zr

Hellstern, E., Schultz, L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 414 KB

english, 1986

6

Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen

Weber, Jörg, Pearton, S. J., Dautremont-Smith, W. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 403 KB

english, 1986

7

Photoluminescence of Mg-doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation

Makita, Yunosuke, Takeuchi, Yoshinori, Ohnishi, Nobukazu, Nomura, Toshio, Kudo, Kazuhiro, Tanaka, Hideki, Lee, Hae-Chol, Mori, Masahiko, Mitsuhashi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 556 KB

english, 1986

8

Laser beam modulator and pulse former with an adjustable transmission-voltage characteristic provided by persistent spectral hole burning

Schätz, P., Bogner, U., Maier, Max

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 499 KB

english, 1986

9

V-groove distributed feedback laser for 1.3–1.55 μm operation

Temkin, H., Dolan, G. J., Wilt, D. P., Logan, R. A., Lahtinen, J. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 490 KB

english, 1986

10

Projection printing of gold micropatterns by photochemical decomposition

Baum, Thomas H., Marinero, Ernesto E., Jones, Carol R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 526 KB

english, 1986

11

Degenerate four-wave mixing from layered semiconductor clusters in the quantum size regime

Sarid, Dror, Rhee, Bum Ku, McGinnis, Brian P., Sandroff, Claude J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 502 KB

english, 1986

12

New singlet oxygen generator for chemical oxygen-iodine lasers

Yoshida, S., Saito, H., Fujioka, T., Yamakoshi, H., Uchiyama, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 415 KB

english, 1986

13

Fast shrinkage of oxidation stacking faults during O2/NF3 oxidation of silicon

Kim, U. S., Jaccodine, R. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

14

In situ x-ray topographic observation of dislocation behavior in In-doped GaAs crystals

Tohno, S., Shinoyama, S., Katsui, A., Takaoka, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

15

Induced resonance electron cyclotron quasi-optical maser in an open resonator

Sprangle, P., Tang, C. M., Serafim, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 524 KB

english, 1986

16

Transmission electron microscopy of aluminum implanted and annealed (100) Si: Direct evidence of aluminum precipitate formation

Sadana, D. K., Norcott, M. H., Wilson, R. G., Dahmen, U.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

17

Hologram fixing process at room temperature in photorefractive Bi12SiO20 crystals

Herriau, J. P., Huignard, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 424 KB

english, 1986

18

Low threshold operation of a GaAlAs/GaAs distributed feedback laser with double channel planar buried heterostructure

Nakano, Yoshiaki, Tada, Kunio

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 400 KB

english, 1986

19

Continuous control of coherence length in separately pumped (AlGa)As lasers

Yamamoto, Saburo, Hijikata, Toshiki

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 366 KB

english, 1986

20

Ion beam induced conductivity and structural changes in diamondlike carbon coatings

Prawer, S., Kalish, R., Adel, M., Richter, V.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 423 KB

english, 1986

21

Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

Fujiwara, K., Nakamura, A., Tokuda, Y., Nakayama, T., Hirai, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 413 KB

english, 1986

22

Wide-gap boron-doped microcrystalline silicon nitride

Hasegawa, S., Segawa, M., Kurata, Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 361 KB

english, 1986

23

Observation of gain compression in a GaAlAs diode laser through a picosecond transmission measurement

Johnson, B. C., Mooradian, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 458 KB

english, 1986

24

Surface-emitting GaAlAs/GaAs linear laser arrays with etched mirrors

Yang, J. J., Sergant, M., Jansen, M., Ou, S. S., Eaton, L., Simmons, W. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 353 KB

english, 1986

25

Observation of a quasi-two-dimensional electron gas at an InSb/CdTe interface

Zheng, Y-D., Chang, Y. H., McCombe, B. D., Farrow, R. F. C., Temofonte, T., Shirland, F. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 529 KB

english, 1986

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