Volume 49; Issue 19

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Applied Physics Letters
Volume 49; Issue 19

Applied Physics Letters

Volume 49; Issue 19

1

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

Cibert, J., Petroff, P. M., Dolan, G. J., Pearton, S. J., Gossard, A. C., English, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 558 KB

english, 1986

2

Self‐consistent analysis of resonant tunneling current

Ohnishi, Hiroaki, Inata, Tsuguo, Muto, Shunichi, Yokoyama, Naoki, Shibatomi, Akihiko

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 410 KB

english, 1986

3

Fabrication of small laterally patterned multiple quantum wells

Scherer, A., Craighead, H. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 529 KB

english, 1986

4

Study of nonstoichiometry in undoped semi-insulating GaAs using precise lattice parameter measurements

Nakajima, Masato, Sato, Takashi, Inada, Tomoki, Fukuda, Tsuguo, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 473 KB

english, 1986

5

Novel electrostatic mechanism in the thermal instability of z-cut LiNbO3 interferometers

Skeath, Perry, Bulmer, C. H., Hiser, S. C., Burns, W. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 463 KB

english, 1986

6

Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

Palmier, J. F., Minot, C., Lievin, J. L., Alexandre, F., Harmand, J. C., Dangla, J., Dubon-Chevallier, C., Ankri, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 435 KB

english, 1986

7

Reaction of titanium with silicon nitride under rapid thermal annealing

Morgan, A. E., Broadbent, E. K., Sadana, D. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

8

Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

Warren, W. L., Lenahan, P. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 487 KB

english, 1986

9

Investigation of orientation effect on contact resistance in selectively doped AlGaAs/GaAs heterostructures

Kamada, M., Suzuki, T., Nakamura, F., Mori, Y., Arai, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 432 KB

english, 1986

10

X-point excitons in AlAs/GaAs superlattices

Finkman, E., Sturge, M. D., Tamargo, M. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 513 KB

english, 1986

11

Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells

Miller, R. C., Tu, C. W., Sputz, S. K., Kopf, R. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 549 KB

english, 1986

12

Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

Taira, K., Takano, C., Kawai, H., Arai, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 435 KB

english, 1986

13

Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si

Ajmera, A. C., Rozgonyi, G. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 566 KB

english, 1986

14

Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature

Thorpe, T. P., Qadri, S. B., Wolf, S. A., Claassen, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 492 KB

english, 1986

15

Amorphous SiN:H dielectrics with low density of defects

Hasegawa, S., Matuura, M., Kurata, Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 472 KB

english, 1986

16

Response to ‘‘Comment on ‘Mobility of Ni versus Zr in an amorphous Ni-Zr alloy’ ’’ [Appl. Phys. Lett. 49, 1311 (1986)]

Barbour, J. C., Nastasi, M., Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 333 KB

english, 1986

17

Integrated external cavity laser

Dutta, N. K., Cella, T., Piccirilli, A. B., Brown, R. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 389 KB

english, 1986

18

Hydrogen abstraction from hydrogenated amorphous silicon surface by hydrogen atoms

Muramatsu, Yasuji, Yabumoto, Norikuni

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 375 KB

english, 1986

19

Trapping of oxygen at homoepitaxial Si-Si interfaces

Hull, R., Bean, J. C., Gibson, J. M., Joy, D. C., Twigg, M. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 482 KB

english, 1986

20

New native oxide of InP with improved electrical interface properties

Robach, Y., Joseph, J., Bergignat, E., Commere, B., Hollinger, G., Viktorovitch, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 353 KB

english, 1986

21

Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

Won, T., Munns, G., Houdré, R., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 383 KB

english, 1986

22

‘‘New donors’’ in silicon: A quantum well controlled conductivity

Henry, A., Pautrat, J. L., Vendange, P., Saminadayar, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 432 KB

english, 1986

23

Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy

Ghandhi, S. K., Taskar, N. R., Bhat, I. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 410 KB

english, 1986

24

Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure

Reed, M. A., Koestner, R. J., Goodwin, M. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 437 KB

english, 1986

25

Comment on ‘‘Mobility of Ni versus Zr in an amorphous Ni-Zr alloy’’ [Appl. Phys. Lett. 48, 517 (1986)]

Rothman, S. J., Averback, R. S., Hahn, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 319 KB

english, 1986

26

Transmission electron microscope study of the initial stage of formation of Pd2Si and Pt2Si

Aboelfotoh, M. O., Alessandrini, A., d’Heurle, F. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 519 KB

english, 1986

27

Microstructure of magnetron co-sputtered CoCr thin films

Hong, M., Nakahara, S., van Dover, R. B., Boone, T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 545 KB

english, 1986

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