Volume 49; Issue 20

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Applied Physics Letters
Volume 49; Issue 20

Applied Physics Letters

Volume 49; Issue 20

1

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

Anderson, D. A., Bass, S. J., Kane, M. J., Taylor, L. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 544 KB

english, 1986

2

Epitaxial Hg1âxCdxTe growth by low-temperature metalorganic chemical vapor deposition

P. Lu, C. Wang, L. M. Williams, S. N. G. Chu, C. M. Stiles

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 468 KB

english, 1986

3

Longitudinal mode selection in hybrid CO2 laser for subthreshold operation of cw discharge section

Sinha, Sucharita, Gupta, Pradeep K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 430 KB

english, 1986

4

Narrow spectral linewidth semiconductor optical-fiber ring laser

Tai, Shuichi, Kojima, Keisuke, Noda, Susumu, Kyuma, Kazuo, Hamanaka, Koichi, Nakayama, Takashi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 506 KB

english, 1986

5

Improved performance of XeF lasers in argon diluent

Kimura, W. D., Salesky, E. T., Seamans, J. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 464 KB

english, 1986

6

Highly tunable and efficient room-temperature electroluminescence from GaAs doping superlattices

Hasnain, G., Döhler, G. H., Whinnery, J. R., Miller, J. N., Dienes, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 489 KB

english, 1986

7

Modification of the scanning laser acoustic microscope for holographic and tomographic imaging

Lee, Hua, Ricci, Carlos

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

8

Depth distributions of hydrogen-implanted and annealed silicon

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 443 KB

english, 1986

9

Threshold current of single quantum well lasers: The role of the confining layers

Nagle, J., Hersee, S., Krakowski, M., Weil, T., Weisbuch, C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 530 KB

english, 1986

10

Effect of active layer thickness on differential quantum efficiency of 1.55 μm InGaAsP buried crescent injection lasers

Cheng, W. H., Renner, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 468 KB

english, 1986

11

Residual acceptor assessment in as-grown bulk GaAs by Raman and selective pair luminescence spectroscopy: A comparative study

Wagner, J., Ramsteiner, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 483 KB

english, 1986

12

Charge transfer enhancement of photoconductivity in hydrogenated amorphous Ge/Si multilayer films

Wronski, C. R., Tiedje, T., Persans, P., Abeles, B., Hicks, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 447 KB

english, 1986

13

Undercooling of pure metals in a containerless, microgravity environment

Hofmeister, W. H., Robinson, M. B., Bayuzick, R. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 407 KB

english, 1986

14

Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

Mitsuyu, T., Ohkawa, K., Yamazaki, O.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 386 KB

english, 1986

15

Photoinduced surface morphology improvement and preferential orientation enhancement in film deposition of evaporated ZnS

Yokoyama, Hiroyuki

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 458 KB

english, 1986

16

Photopumped laser operation of AlxGa1−xAs-GaAs quantum well heterostructures with Se and Mg sheet doping

Kaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 493 KB

english, 1986

17

Rayleigh wave diffraction from surface-breaking discontinuities

Tittmann, B. R., Ahlberg, L. A., Mal, A. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 407 KB

english, 1986

18

Low-frequency noise in low 1/f noise dc SQUID’s

Foglietti, V., Gallagher, W. J., Ketchen, M. B., Kleinsasser, A. W., Koch, R. H., Raider, S. I., Sandstrom, R. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 480 KB

english, 1986

19

High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

Miller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H., Capik, R. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 454 KB

english, 1986

20

Injected current-related distortion of photothermal signals from a photovoltaic cell

Cahen, David, Nordal, Per-Erik, Kanstad, Svein Otto

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 458 KB

english, 1986

21

Propagation of plasmons across layers of GaAs-Ga1−xAlxAs superlattices

Kirillov, D., Webb, C., Eckstein, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 485 KB

english, 1986

22

Experimental measurement of a high-field dipole in GaAs field-effect transistors

Abeles, J. H., Leheny, R. F., Chang, G. K., Allen, S. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 501 KB

english, 1986

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