Volume 49; Issue 21

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Applied Physics Letters
Volume 49; Issue 21

Applied Physics Letters

Volume 49; Issue 21

1

Variational calculations of subbands in a quantum well with uniform electric field: Gram–Schmidt orthogonalization approach

Ahn, Doyeol, Chuang, S. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 430 KB

english, 1986

2

Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurity

Epler, J. E., Burnham, R. D., Thornton, R. L., Paoli, T. L., Bashaw, M. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 500 KB

english, 1986

3

Laser-induced fluorescence studies of excimer laser ablation of Al2O3

Dreyfus, R. W., Kelly, Roger, Walkup, R. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 531 KB

english, 1986

4

Transient enhanced diffusion of dopants in silicon induced by implantation damage

Angelucci, R., Negrini, P., Solmi, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 476 KB

english, 1986

5

Photoluminescence studies of ultrahigh-purity epitaxial silicon

Thewalt, M. L. W., Steele, A. G., Huffman, J. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 434 KB

english, 1986

6

Base transport dynamics in a heterojunction bipolar transistor

Hayes, J. R., Levi, A. F. J., Gossard, A. C., English, J. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 458 KB

english, 1986

7

Long term storage of inversion holes at a superlattice/GaAs interface

Melloch, M. R., Qian, Q-D., Cooper, J. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 401 KB

english, 1986

8

Probe pressure effect on tunneling current through a GaAs-(Al,Ga)As-GaAs heterojunction barrier

Solomon, P. M., Wright, S. L., La Tulipe, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

9

Radiation-induced space charge in polymer film capacitors

Kurtz, S. R., Anderson, R. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 526 KB

english, 1986

10

Temperature-dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growth

Koteles, Emil S., Elman, B. S., Jagannath, C., Chen, Y. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 485 KB

english, 1986

11

Adhesion measurement of thin films by indentation

Matthewson, M. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 462 KB

english, 1986

12

Growth of In0.53Ga0.47As by liquid phase epitaxy over tungsten on structured InP substrates

Hancox, J. E., Houston, P. A., Hill, G., Chand, N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

13

Experimental demonstration of longitudinal wiggler free-electron laser

Shraga, I., Goren, Y., Leibovitch, C., Eckhouse, S., Gover, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

14

Temperature and intensity dependence of photorefractive effect in GaAs

Cheng, Li-Jen, Partovi, Afshin

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 486 KB

english, 1986

15

Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy

Leopold, D. J., Ballingall, J. M., Wroge, M. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 420 KB

english, 1986

16

Thermal donor formation in electron-irradiated Czochralski silicon

Svensson, Johan, Svensson, Bengt G., Lindström, J. Lennart

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 511 KB

english, 1986

17

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

Kachare, R., Anspaugh, B. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 432 KB

english, 1986

18

Ultrasonic imaging of layered structures utilizing nondestructive subnanosecond photoacoustic pulse generation

Tam, A. C., Ayers, G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

19

Influence of oxygen implantation conditions on the properties of a high-temperature-annealed silicon-on-insulator material

Golanski, A., Perio, A., Grob, J. J., Stuck, R., Maillet, S., Clavelier, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 437 KB

english, 1986

20

GaAs pn junction studied by scanning tunneling potentiometry

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 386 KB

english, 1986

21

Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon

Adekoya, W. O., Muller, J. C., Siffert, P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

22

Semiconductor-doped glass ion-exchanged waveguides

Cullen, T. J., Ironside, C. N., Seaton, C. T., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

23

Low threshold 1.51 μm InGaAsP buried crescent injection lasers with semi-insulating current confinement layer

Cheng, W. H., Su, C. B., Buehring, K. D., Chien, C. P., Ure, J. W., Perrachione, D., Renner, D., Hess, K. L., Zehr, S. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 335 KB

english, 1986

24

Optically induced switching in a p-channel double heterostructure optoelectronic switch

Taylor, G. W., Mand, R. S., Simmons, J. G., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 483 KB

english, 1986

25

Limitations to the open circuit voltage of amorphous silicon solar cells

Hack, M., Shur, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

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