Volume 49; Issue 22

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Applied Physics Letters
Volume 49; Issue 22

Applied Physics Letters

Volume 49; Issue 22

1

Phase conjugate signal from Bi12SiO20 crystal at elevated temperatures

Jo, Jae Heung, Lee, Sang Soo

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

2

Morphology of Au/GaAs interfaces

Liliental-Weber, Z., Washburn, J., Newman, N., Spicer, W. E., Weber, E. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 596 KB

english, 1986

3

In situ contacts to GaAs based on InAs

Wright, S. L., Marks, R. F., Tiwari, S., Jackson, T. N., Baratte, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 476 KB

english, 1986

4

Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Chang, R. P. H., Fiory, A. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 488 KB

english, 1986

5

Work function reduction of a tungsten surface due to cesium ion bombardment

Tompa, G. S., Carr, W. E., Seidl, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 505 KB

english, 1986

6

Optimization of the discharge characteristics of a laser device employing a plasma electrode

Nakamura, Kenshi, Yukawa, Nobuo, Mochizuki, Takehiro, Horiguchi, Shiro, Nakaya, Toshizo

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 395 KB

english, 1986

7

Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate

Levine, B. F., Willens, R. H., Bethea, C. G., Brasen, D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 402 KB

english, 1986

8

Room-temperature negative differential resistance in strained-layer GaAs-AlGaAs-InGaAs quantum well heterostructures

Lee, G. S., Hsieh, K. Y., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 378 KB

english, 1986

9

Laser photochemical etching of molybdenum and tungsten thin films by surface halogenation

Rothschild, M., Sedlacek, J. H. C., Ehrlich, D. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 473 KB

english, 1986

10

Planar, embedded InP/GaInAs p-i-n photodiode with very high-speed response characteristics

Miura, S., Kuwatsuka, H., Mikawa, T., Wada, O.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 365 KB

english, 1986

11

Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2 buffer layer

Zogg, H., Blunier, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 422 KB

english, 1986

12

Contact structure formed in the Ni/Al/Si system due to rapid thermal melting

Katz, A., Komem, Y.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 442 KB

english, 1986

13

Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate

Cohen-Solal, G., Bailly, F., Barbé, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

14

Hot-electron capture to DX centers in AlxGa1−xAs at low Al mole fractions (x

Theis, T. N., Parker, B. D., Solomon, P. M., Wright, S. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 440 KB

english, 1986

15

Reversibility of recombination-induced defect reactions in amorphous Si:H

Redfield, David

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 368 KB

english, 1986

16

Avalanche photomultiplication in the far infrared

Brown, Fielding, Parker, David R., Heyman, James, Newbury, Nathan

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

17

Phased-array lasers with a uniform, stable supermode

Streifer, W., Osiński, M., Scifres, D. R., Welch, D. F., Cross, P. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 395 KB

english, 1986

18

Theoretical study of the electronic properties of semimagnetic superlattices

Wu, G. Y., Smith, D. L., Mailhiot, C., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 410 KB

english, 1986

19

Time-of-flight measurements of minority-carrier transport in p-silicon

Tang, D. D., Fang, F. F., Scheuermann, M., Chen, T. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 419 KB

english, 1986

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