Volume 49; Issue 25

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Applied Physics Letters
Volume 49; Issue 25

Applied Physics Letters

Volume 49; Issue 25

1

Multiple wavelength optical recording using cyanine dye J aggregates in Langmuir–Blodgett films

Ishimoto, C., Tomimuro, H., Seto, J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 406 KB

english, 1986

2

Femtosecond carrier relaxation in semiconductor-doped glasses

Nuss, M. C., Zinth, W., Kaiser, W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 549 KB

english, 1986

3

Atomic structure of the GaAs/Si interface

Hull, R., Rosner, S. J., Koch, S. M., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 551 KB

english, 1986

4

Photochemically pumped I2(D’3Π2g→A’3Π2u) emission in mixtures of I2+C3F7I and I2+O3: Implications for chemically initiated, broadband optically pumped I2(D’→A’) lasers

Stech, D. J., Muller, C. H., Czyzak, S. R., Neumann, D. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 476 KB

english, 1986

5

Electron spin resonance observations of paramagnetic defects produced in fused silica by high-energy oxygen and krypton ions

Langevin, Y., Dooryhee, E., Borg, J., Duraud, J-P., Lecomte, C., Balanzat, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 489 KB

english, 1986

6

p-type CdTe epilayers grown by photoassisted molecular beam epitaxy

Bicknell, R. N., Giles, N. C., Schetzina, J. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 453 KB

english, 1986

7

Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

Reynolds, S., Vook, D. W., Gibbons, J. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 412 KB

english, 1986

8

Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasers

Tsang, W. T., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 518 KB

english, 1986

9

Femtosecond optical measurement of hot-carrier relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures

Rosker, M. J., Wise, F. W., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 494 KB

english, 1986

10

ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

Yokogawa, Toshiya, Ogura, Mototsugu, Kajiwara, Takao

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 371 KB

english, 1986

11

Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs

Von Neida, A. R., Pearton, S. J., Stavola, M., Caruso, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 446 KB

english, 1986

12

One-third (period three) harmonic generation in microwave-driven Josephson tunnel junctions

Hansen, J. Bindslev, Clarke, J., Mygind, J., Ovsyannikov, G. A., Svensmark, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 412 KB

english, 1986

13

Self-aligned enhancement-mode and depletion-mode GaAs field-effect transistors employing the δ-doping technique

Schubert, E. F., Cunningham, J. E., Tsang, W. T.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 446 KB

english, 1986

14

Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

Tsutsui, Kazuo, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

15

Experimental verification of the improved coupled-mode equations

Marcatili, E. A. J., Buhl, L. L., Alferness, R. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 317 KB

english, 1986

16

Laser-controlled collective ion accelerator

O’Shea, P. G., Destler, W. W., Rodgers, J., Segalov, Z.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 469 KB

english, 1986

17

Second quantized state lasing of a current pumped single quantum well laser

Mittelstein, Michael, Arakawa, Yasuhiko, Larsson, Anders, Yariv, Amnon

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 461 KB

english, 1986

18

High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope

Marek, J., Elliot, A. G., Wilke, V., Geiss, R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 468 KB

english, 1986

19

Time-resolved studies of intense, relativistic electron beams with a subnanosecond Čerenkov electro-optic shutter

Hartemann, F., Bekefi, G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 539 KB

english, 1986

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