Volume 49; Issue 26

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Applied Physics Letters
Volume 49; Issue 26

Applied Physics Letters

Volume 49; Issue 26

1

Submicron conducting channels defined by shallow mesa etch in GaAs-AlGaAs heterojunctions

van Houten, H., van Wees, B. J., Heijman, M. G. J., André, J. P.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 370 KB

english, 1986

2

Interference peaks in double-crystal x-ray rocking curves of laser structures

Chu, X., Tanner, B. K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 461 KB

english, 1986

3

Deep level transient spectroscopy of interfacial traps at ion-implanted ultrahigh p-Si Schottky barriers

Slowik, John H., Ashok, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

4

Measurement of air gap thickness underneath an opaque film by pulsed photothermal radiometry

Tam, A. C., Sontag, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 467 KB

english, 1986

5

Observation of, and bias-dependent annealing of, a paramagnetic defect possibly unique to thermally grown SiO2

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 493 KB

english, 1986

6

Regenerative amplification of temporally compressed picosecond pulses at 2 kHz

Chang, Y. J., Veas, C., Hopkins, J. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 432 KB

english, 1986

7

Symmetry forbidden Raman scattering from (100) surfaces of oxidized Si and Ge

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 501 KB

english, 1986

8

Phase matching in symmetrical single-mode magneto-optic waveguides by application of stress

Dammann, H., Pross, E., Rabe, G., Tolksdorf, W., Zinke, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

9

Deep level transient spectroscopy signature analysis of DX centers in AlGaAs and GaAsP

Criado, J., Gomez, A., Muñoz, E., Calleja, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 382 KB

english, 1986

10

Plasma sprayed Fe76Nd16B8 permanent magnets

Overfelt, R. A., Anderson, C. D., Flanagan, W. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 373 KB

english, 1986

11

Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

Masum Choudhury, A. N. M., Armiento, C. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 415 KB

english, 1986

12

Nucleation and initial growth of GaAs on Si substrate

Rosner, S. J., Koch, S. M., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 520 KB

english, 1986

13

Indium exodiffusion in annealed GaAs:In crystals

Krawczyk, S. K., Khoukh, A., Olier, R., Chabli, A., Molva, E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 415 KB

english, 1986

14

Epitaxial growth of NiSi2 on ion-implanted silicon at 250–280 °C

Lu, S. W., Nieh, C. W., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 557 KB

english, 1986

15

Resonant tunneling hot-electron transistor with current gain of 5

Mori, Toshihiko, Ohnishi, Hiroaki, Imamura, Kenichi, Muto, Syunichi, Yokoyama, Naoki

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 405 KB

english, 1986

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