Volume 49; Issue 3

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Applied Physics Letters
Volume 49; Issue 3

Applied Physics Letters

Volume 49; Issue 3

1

New approach to the high quality epitaxial growth of lattice‐mismatched materials

Luryi, Serge, Suhir, Ephraim

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 458 KB

english, 1986

2

Formation of amorphous alloys by the mechanical alloying of crystalline powders of pure metals and powders of intermetallics

Schwarz, Ricardo B., Koch, Carl C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 528 KB

english, 1986

3

Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure

Reed, M. A., Lee, J. W., Tsai, H‐L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 570 KB

english, 1986

4

Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors

Stanton, Christopher J., Baranger, Harold U., Wilkins, John W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 514 KB

english, 1986

5

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Panish, M. B., Temkin, H., Hamm, R. A., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 492 KB

english, 1986

6

High-efficiency, high-energy operation of an intense electron beam initiated HF chemical laser using a mixture containing a heavy fluoride MoF6

Inagaki, Hirohito, Suda, Akira, Obara, Minoru

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 442 KB

english, 1986

7

Self-mode locking in a transverse-discharge copper-vapor laser

Im, Kiegon, Kim, Jin J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 408 KB

english, 1986

8

Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapor phase epitaxy InP

Attolini, G., Frigeri, C., Pelosi, C., Salviati, G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 520 KB

english, 1986

9

Surface photovoltage measurement of light instability of amorphous silicon films

Epstein, K. A., Tran, N. T., Jeffrey, F. R., Moore, A. R.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 433 KB

english, 1986

10

Chemical beam epitaxial growth of extremely high quality InGaAs on InP

Tsang, W. T., Dayem, A. H., Chiu, T. H., Cunningham, J. E., Schubert, E. F., Ditzenberger, J. A., Shah, J., Zyskind, J. L., Tabatabaie, N.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 467 KB

english, 1986

11

Reverse-bias current-electric field characteristics of amorphous silicon films with blocking layers: Thickness dependence

Kakinuma, H., Nishikawa, S., Watanabe, T., Nihei, K.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 497 KB

english, 1986

12

Optically pumped tunable mode-locked Si-doped GaAs laser

Valk, B., Call, T. S., Salour, M. M., Kopp, W., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 490 KB

english, 1986

13

Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure

Van Eck, T. E., Chu, P., Chang, W. S. C., Wieder, H. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 354 KB

english, 1986

14

Photothermal modulation of the gap distance in scanning tunneling microscopy

Amer, Nabil M., Skumanich, Andrew, Ripple, Dean

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 329 KB

english, 1986

15

Stress relaxation technique for thermally grown SiO2

Landsberger, L. M., Tiller, W. A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 433 KB

english, 1986

16

Heterojunction bipolar transistor using pseudomorphic GaInAs for the base

Enquist, P. M., Ramberg, L. R., Najjar, F. E., Schaff, W. J., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 335 KB

english, 1986

17

High photoconductive gain in GexSi1−x/Si strained-layer superlattice detectors operating at λ=1.3 μm

Temkin, H., Bean, J. C., Pearsall, T. P., Olsson, N. A., Lang, D. V.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 455 KB

english, 1986

18

Frequency response of an InGaAsP vapor phase regrown buried heterostructure laser with 18 GHz bandwidth

Olshansky, R., Lanzisera, V., Su, C. B., Powazinik, W., Lauer, R. B.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 353 KB

english, 1986

19

Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTe

Monfroy, G., Sivananthan, S., Chu, X., Faurie, J. P., Knox, R. D., Staudenmann, J. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 489 KB

english, 1986

20

Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering

Thornton, R. L., Burnham, R. D., Paoli, T. L., Holonyak, N., Deppe, D. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 338 KB

english, 1986

21

Laser induced enhancement in sensitivity of polymeric nuclear track detector CR-39

Kukreja, L. M., Joshi, V. B., Bhagwat, A. M., Chatterjee, U. K., Bhawalkar, D. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 375 KB

english, 1986

22

Narrowband grating resonator filters in InGaAsP/InP waveguides

Alferness, R. C., Joyner, C. H., Divino, M. D., Martyak, M. J. R., Buhl, L. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 394 KB

english, 1986

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