Volume 49; Issue 5

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Applied Physics Letters
Volume 49; Issue 5

Applied Physics Letters

Volume 49; Issue 5

1

Generation of subpicosecond solitonlike optical pulses at 0.3 THz repetition rate by induced modulational instability

Tai, K., Tomita, A., Jewell, J. L., Hasegawa, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 605 KB

english, 1986

2

Optical emission at 1.32 Î¼m from sulfur-doped crystalline silicon

Brown, T. G., Hall, D. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 474 KB

english, 1986

3

Second harmonic generation in poled polymer films

Singer, K. D., Sohn, J. E., Lalama, S. J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 533 KB

english, 1986

4

Amplification of bulk and surface plasmons in semiconductor superlattices

Hawrylak, Pawel, Quinn, John J.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 447 KB

english, 1986

5

Power loss by two-dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening

Xie, Y. H., People, R., Bean, J. C., Wecht, K. W.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 442 KB

english, 1986

6

High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

Otsuka, N., Choi, C., Nakamura, Y., Nagakura, S., Fischer, R., Peng, C. K., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 532 KB

english, 1986

7

Measurements of the critical resolved shear stress for indium-doped and undoped GaAs single crystals

Tabache, M. G., Bourret, E. D., Elliot, A. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 442 KB

english, 1986

8

Formation of a superconducting hexagonal Nb-Si phase by pulsed laser quenching

Wang, Wen-Kui, Spaepen, Frans

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 479 KB

english, 1986

9

Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices

Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A., Ourmazd, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

10

Peroxypolytungstic acids: A new inorganic resist material

Okamoto, Hiroshi, Iwayanagi, Takao, Mochiji, Kozo, Umezaki, Hiroshi, Kudo, Tetsuichi

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 348 KB

english, 1986

11

Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy

Tischler, M. A., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 390 KB

english, 1986

12

Light-activated charge storage in amorphous silicon-carbon films

Könenkamp, R., Paasche, S. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 403 KB

english, 1986

13

High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

Larsson, A., Andrekson, P. A., Andersson, P., Eng, S. T., Salzman, J., Yariv, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 388 KB

english, 1986

14

Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in silicon

Oates, A. S., Newman, R. C.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 393 KB

english, 1986

15

Comment on ‘‘Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectance’’ [Appl. Phys. Lett. 47, 1336 (1985)]

Rosencwaig, Allan, Opsal, Jon, Smith, W. L., Willenborg, D. L.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 289 KB

english, 1986

16

Orientational dependence of the electron beam induced order-disorder transition in quasicrystalline Al86Mn14

Murray, E. R., Ast, D. G.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 368 KB

english, 1986

17

Response to ‘‘Comment on ‘Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectance’ ’’ [Appl. Phys. Lett. 49, 301 (1986)]

Guidotti, D., van Driel, H. M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 351 KB

english, 1986

18

Novel attenuated total internal reflectance spectroscopic cell using infrared fibers for aqueous solutions

Simhony, S., Kosower, E. M., Katzir, A.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 326 KB

english, 1986

19

F2 fuel performance in XeF lasers at ambient and elevated temperatures

Kimura, W. D., Moody, S. E., Seamans, J. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 379 KB

english, 1986

20

Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon

Swanson, M. L., Wichert, Th., Quenneville, A. F.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 395 KB

english, 1986

21

Single-crystal, optical interference filters and integrated high reflector/photodiode using multilayers of GaP and GaAsxP1−x

Gourley, P. L., Biefeld, R. M., Zipperian, T. E.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 425 KB

english, 1986

22

Delta-doped ohmic contacts to n-GaAs

Schubert, E. F., Cunningham, J. E., Tsang, W. T., Chiu, T. H.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 517 KB

english, 1986

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