Volume 50; Issue 10

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Applied Physics Letters
Volume 50; Issue 10

Applied Physics Letters

Volume 50; Issue 10

1

Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel

Chemla, D. S., Bar-Joseph, I., Klingshirn, C., Miller, D. A. B., Kuo, J. M., Chang, T. Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 703 KB

english, 1987

2

Iterative method for computing the inverse Abel transform

Vicharelli, Pablo A., Lapatovich, Walter P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 584 KB

english, 1987

3

Importance of space-charge effects in resonant tunneling devices

Cahay, M., McLennan, M., Datta, S., Lundstrom, M. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 506 KB

english, 1987

4

Dynamical states and stability of linear arrays of Josephson junctions

Hadley, P., Beasley, M. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 576 KB

english, 1987

5

Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures

Livengood, R. E., Hess, D. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 610 KB

english, 1987

6

X-ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB6/GaAs(001) c (4×4) interface

Yokotsuka, Tatsuo, Narusawa, Tadashi, Uchida, Yoko, Nakashima, Hisao

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

7

Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

Hong, Won-Pyo, Bhattacharya, Pallab K., Singh, Jasprit

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 509 KB

english, 1987

8

Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/AlxGa1−xAs quantum well structures

Lee, Y. R., Ramdas, A. K., Chambers, F. A., Meese, J. M., Ram Mohan, L. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 521 KB

english, 1987

9

Growth and dissolution of oxide films during laser-assisted combustion of Ti and Zr

Ursu, I., Mihailescu, I. N., Nistor, L. C., Teodorescu, V. S., Prokhorov, A. M., Konov, V. I., Ralchenko, V. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 596 KB

english, 1987

10

Direct and accurate measurement of etch rate of polymer films under far-UV irradiation

Lazare, Sylvain, Soulignac, Jean Claude, Fragnaud, Pascal

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 459 KB

english, 1987

11

Interfacially initiated crystallization in amorphous germanium films

Homma, Hitoshi, Schuller, Ivan K., Sevenhans, Walter, Bruynseraede, Yvan

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 557 KB

english, 1987

12

Formation of submicron epitaxial islands of Pd2Si on silicon

Boothroyd, C. B., Stobbs, W. M., Tu, K. N.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 709 KB

english, 1987

13

Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy

Bour, D. P., Shealy, J. R., Wicks, G. W., Schaff, W. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 460 KB

english, 1987

14

Fast P-doped silicon bolometer for detecting heat pulses

Boragno, C., Valbusa, U., Pignatel, G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 368 KB

english, 1987

15

Chemical effects in ion mixing of a ternary system (metal-SiO2)

Banwell, T., Nicolet, M-A., Sands, T., Grunthaner, P. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 530 KB

english, 1987

16

Mechanism of electroluminescence in alkaline-earth sulfides

Crandall, Richard S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 498 KB

english, 1987

17

Scanning tunneling microscope as a micromechanical tool

McCord, M. A., Pease, R. F. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

18

Index-guided AlxGa1−xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1−y source

Guido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 600 KB

english, 1987

19

Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage

Satoh, M., Kuriyama, K., Yahagi, M., Iwamura, K., Kim, C., Kawakubo, T., Yoneda, K., Kimura, I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 460 KB

english, 1987

20

Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy

Frei, Michel, Tsui, D. C., Tsang, W. T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 468 KB

english, 1987

21

Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

Mensz, P. M., Wheeler, R. G., Foxon, C. T., Harris, J. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 546 KB

english, 1987

22

Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction

Maher, D. M., Fraser, H. L., Humphreys, C. J., Knoell, R. V., Bean, J. C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 656 KB

english, 1987

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