Volume 50; Issue 11

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Applied Physics Letters
Volume 50; Issue 11

Applied Physics Letters

Volume 50; Issue 11

1

Observation of Stark shifts in quantum well intersubband transitions

Harwit, Alex, Harris, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 533 KB

english, 1987

2

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, I. Hino, T. Yuasa

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 627 KB

english, 1987

3

Development of a formed-ferrite flash plasma light source for gas laser applications

Watanabe, K., Kashiwabara, S., Fujimoto, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 528 KB

english, 1987

4

Importance of heavy ion bombardment for H− formation in surface conversion sources

van Os, C. F. A., van Amersfoort, P. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 481 KB

english, 1987

5

3-ps compressed pulses from a mode-locked Kr+ laser

Valk, B., Vilhelmsson, K., Salour, M. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

6

Single-beam overwrite experiment using In-Se based phase-change optical media

Nishida, Tetsuya, Terao, Motoyasu, Miyauchi, Yasushi, Horigome, Shinkichi, Kaku, Toshimitsu, Ohta, Norio

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 607 KB

english, 1987

7

Resonant two-phonon Raman scattering in GaAs: A sensitive probe for implantation damage and annealing

Wagner, J., Hoffman, Ch.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 584 KB

english, 1987

8

Integrated external cavity distributed Bragg reflector laser

Dutta, N. K., Cella, T., Zilko, J. L., Piccirilli, A. B., Brown, R. L., Napholtz, S. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 543 KB

english, 1987

9

GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition

Fekete, D., Bour, D., Ballantyne, J. M., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 572 KB

english, 1987

10

Al/Si(100) Schottky barrier formation using nozzle jet beam deposition

Wong, J., Mei, S-N., Lu, T-M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 650 KB

english, 1987

11

Light evolution in alkaline-earth-sulfide thin-film ac electroluminescent devices

Crandall, Richard S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 596 KB

english, 1987

12

Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic

Speckman, D. M., Wendt, J. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 641 KB

english, 1987

13

Response to ‘‘Comment on ‘Channeling radiation from strained-layer superlattices’ ’’ [Appl. Phys. Lett. 50, 699 (1987)]

Pathak, Anand P., Balagari, Prasanna K. John

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 371 KB

english, 1987

14

Phase conjugate master oscillator-power amplifier using BaTiO3 and AlGaAs semiconductor diode lasers

Stephens, R. R., Lind, R. C., Giuliano, C. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 527 KB

english, 1987

15

Comment on ‘‘Channeling radiation from strained-layer superlattices’’ [Appl. Phys. Lett. 48, 1075 (1986)]

Ikezi, H., Lin-Liu, Y. R., Ohkawa, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 319 KB

english, 1987

16

Ion milled tips for scanning tunneling microscopy

Biegelsen, D. K., Ponce, F. A., Tramontana, J. C., Koch, S. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 494 KB

english, 1987

17

Segregation and drift of arsenic in SiO2 under the influence of a temperature gradient

Celler, G. K., Trimble, L. E., West, K. W., Pfeiffer, L., Sheng, T. T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 599 KB

english, 1987

18

Theoretical study of a nonlinear prism output coupler

Arlot, P., Vitrant, G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 454 KB

english, 1987

19

Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers

Olshansky, R., Hill, P., Lanzisera, V., Powazinik, W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 491 KB

english, 1987

20

Low-temperature molecular beam epitaxy of gallium arsenide

Missous, M., Singer, K. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 406 KB

english, 1987

21

Redistribution of arsenic in silicon during high pressure thermal oxidation

Choi, Seong S., Numan, M. Z., Chu, W. K., Srivastava, J. K., Irene, E. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 530 KB

english, 1987

22

Coupled stripe AlxGa1−xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering

Deppe, D. G., Jackson, G. S., Holonyak, N., Burnham, R. D., Thornton, R. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 658 KB

english, 1987

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