Volume 50; Issue 15

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Applied Physics Letters
Volume 50; Issue 15

Applied Physics Letters

Volume 50; Issue 15

1

Theory of Faraday rotation by dilute suspensions of small particles

Hui, P. M., Stroud, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 509 KB

english, 1987

2

Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy

Bar-Joseph, I., Klingshirn, C., Miller, D. A. B., Chemla, D. S., Koren, U., Miller, B. I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 545 KB

english, 1987

3

Effect of hydrogen on shallow dopants in crystalline silicon

Pantelides, Sokrates T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 530 KB

english, 1987

4

Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffraction

P. J. Orders, B. F. Usher

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 617 KB

english, 1987

5

Yb-doped InP grown by metalorganic chemical vapor deposition

Uwai, Kunihiko, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 605 KB

english, 1987

6

New metastable defects in GaAs

Buchwald, W. R., Johnson, N. M., Trombetta, L. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 608 KB

english, 1987

7

Time-resolved photoacoustic studies of vascular tissue ablation at three laser wavelengths

Cross, F. W., Al-Dhahir, R. K., Dyer, P. E., MacRobert, A. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 625 KB

english, 1987

8

Background doping dependence of silicon diffusion in p-type GaAs

Deppe, D. G., Holonyak, N., Kish, F. A., Baker, J. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 581 KB

english, 1987

9

Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures

Casel, A., Jorke, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 496 KB

english, 1987

10

Depth profiling of As at the SiO2/Si interface using secondary ion mass spectrometry

Morgan, Alan E., Maillot, Philippe

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

11

Supplemental multilevel interconnects by laser direct writing: Application to GaAs digital integrated circuits

Black, Jerry G., Doran, Scott P., Rothschild, Mordechai, Ehrlich, Daniel J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 703 KB

english, 1987

12

Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates

Choi, C., Otsuka, N., Munns, G., Houdre, R., Morkoç, H., Zhang, S. L., Levi, D., Klein, M. V.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 579 KB

english, 1987

13

Thin-film reaction between Ti and Si3N4

Barbour, J. C., Kuiper, A. E. T., Willemsen, M. F. C., Reader, A. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 630 KB

english, 1987

14

Space-charge-limited current in a miniaturized quadrupole channel

Thomae, R. W., Siebenlist, F., van Putten, A. E., van Amersfoort, P. W., Klein, H., Schempp, A., Weis, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 520 KB

english, 1987

15

Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator

Inoue, Tomoyasu, Hamasaki, Toshihiko

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 679 KB

english, 1987

16

Ultraviolet-excited photoluminescence and Raman scattering in Cd1−xMnxTe-CdTe microstructures

Perkowitz, S., Yom, S. S., Bicknell, R. N., Schetzina, J. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 447 KB

english, 1987

17

Catalytic growth rate enhancement of electron beam deposited iron films

Kunz, R. R., Mayer, T. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 535 KB

english, 1987

18

Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

Temkin, H., Chu, S. N. G., Panish, M. B., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 580 KB

english, 1987

19

Oxygen implantation for internal gettering and reducing carrier lifetime

Weiner, David H., Wong, S. Simon, Drowley, Clifford I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 409 KB

english, 1987

20

Electron mobility in hydrogenated amorphous silicon under single and double injection

Silver, M., Winborne, G., Adler, D., Cannella, V.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 460 KB

english, 1987

21

Resonant tunneling of holes in AlAs/GaAs triple barrier diodes

Nakagawa, T., Fujita, T., Matsumoto, Y., Kojima, T., Ohta, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 476 KB

english, 1987

22

Carrier-induced phase shift and absorption in a semiconductor laser waveguide under current injection

Liu, J. M., Chen, Y. C., Newkirk, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 576 KB

english, 1987

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