Volume 50; Issue 17

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Applied Physics Letters
Volume 50; Issue 17

Applied Physics Letters

Volume 50; Issue 17

1

Investigation by Raman scattering of the properties of III-V compound semiconductors at high temperature

Shealy, J. R., Wicks, G. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 579 KB

english, 1987

2

Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition

Brown, P. D., Hails, J. E., Russell, G. J., Woods, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 476 KB

english, 1987

3

Defects in neutron irradiated SiC

V. Nagesh, J. W. Farmer, R. F. Davis, H. S. Kong

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 530 KB

english, 1987

4

Large volume, high density rf inductively coupled plasma

Boswell, R. W., Porteous, R. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 543 KB

english, 1987

5

Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode

Li, W-Q., Bhattacharya, Pallab K., Juang, F-Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 520 KB

english, 1987

6

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Bhat, R., Koza, M. A., Skromme, B. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 563 KB

english, 1987

7

New technique to detect the GaAs semi-insulating surface property—cw electro-optic probing

Lo, Y. H., Zhu, Z. H., Pan, C. L., Wang, S. Y., Wang, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 566 KB

english, 1987

8

Thin-film photoconductor-electroluminescent memory device with a high brightness and a wide and stable hysteresis

Thioulouse, P., Gonzalez, C., Solomon, I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 594 KB

english, 1987

9

Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition

Beltram, F., Allam, J., Capasso, F., Koren, U., Miller, B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 548 KB

english, 1987

10

Survey of defect-mediated recombination lifetimes in GaAs epilayers grown by different methods

Yablonovitch, E., Bhat, R., Harbison, J. P., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 578 KB

english, 1987

11

Electrical measurement of the formation of the platinum-rich metal silicides by metal-silicon reaction

Gas, P., Tardy, J., LeGoues, F., d’Heurle, F. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 619 KB

english, 1987

12

Activation characteristics and defect structure in Si-implanted GaAs-on-Si

Vernon, S. M., Pearton, S. J., Gibson, J. M., Short, K. T., Haven, V. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 625 KB

english, 1987

13

Thermal annealing of semi-insulating GaAs under controlled arsenic pressure

Obokata, T., Sato, T., Fujii, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 600 KB

english, 1987

14

Planar avalanche photodiode with a low-doped, reduced curvature junction

Chi, G. C., Muehlner, D. J., Ostermayer, F. W., Freund, J. M., Pawelek, R., McCoy, R. J., Peticolas, L. J., Mattera, V. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 548 KB

english, 1987

15

Quantitative theory of optical properties of HgTe-CdTe superlattices

Zoryk, A., Jaros, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 558 KB

english, 1987

16

Growth and characterization of a delta-function doping layer in Si

Zeindl, H. P., Wegehaupt, T., Eisele, I., Oppolzer, H., Reisinger, H., Tempel, G., Koch, F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 558 KB

english, 1987

17

Erratum: Experimental observation of polarization instability in a birefringent optical fiber [Appl. Phys. Lett. 49, 1224 (1986)]

Trillo, S., Wabnitz, S., Stolen, R. H., Assanto, G., Seaton, C. T., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 294 KB

english, 1987

18

Two-photon absorption in ZnS calculated by an empirical pseudopotential method

White, W. T., Yee, J. H., Orvis, W. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 382 KB

english, 1987

19

Very high relaxation oscillation frequency in dry-etched short cavity GaAs/AlGaAs multiquantum well lasers

Yuasa, Tonao, Yamada, Tomoyuki, Asakawa, Kiyoshi, Ishii, Makoto, Uchida, Mamoru

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 550 KB

english, 1987

20

Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffraction

Ichikawa, M., Doi, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 594 KB

english, 1987

21

Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substrates

Tamamura, K., Ogawa, J., Akimoto, K., Mori, Y., Kojima, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 570 KB

english, 1987

22

Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

Lee, H. C., Hariz, A., Dapkus, P. D., Kost, A., Kawase, M., Garmire, E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 519 KB

english, 1987

23

Cycling of defects between trapped negative charge and interface states at the Si-SiO2 interface

Sung, J. M., Lyon, S. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 510 KB

english, 1987

24

Use of multilayer targets to inject trace elements into laser-produced plasma

Zigler, A., Kolbe, J., Lee, R. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 397 KB

english, 1987

25

Ohmic contacts to n-type GaAs using high-temperature rapid thermal annealing for self-aligned processing

Chen, C. L., Mahoney, L. J., Woodhouse, J. D., Finn, M. C., Nitishin, P. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 691 KB

english, 1987

26

Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry

Fishbein, Bruce J., Plummer, James D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 581 KB

english, 1987

27

Effect of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors

Choi, J. Y., Ko, P. K., Hu, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 539 KB

english, 1987

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