Volume 50; Issue 18

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Applied Physics Letters
Volume 50; Issue 18

Applied Physics Letters

Volume 50; Issue 18

1

Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy

Tischler, M. A., Anderson, N. G., Kolbas, R. M., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 456 KB

english, 1987

2

Measurement of hole velocity in n-type InGaAs

Hill, P., Schlafer, J., Powazinik, W., Urban, M., Eichen, E., Olshansky, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 550 KB

english, 1987

3

Improved electron mobility by AlAs spacer in one-sided selectively doped AlxGa1âxAs/GaAs multiple quantum well heterostructures

Ploog, K., Fronius, H., Fischer, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 328 KB

english, 1987

4

Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes

Weil, T., Vinter, B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 498 KB

english, 1987

5

Fabrication and characterization of optical waveguides in KTiOPO4

Bierlein, John D., Ferretti, August, Brixner, Lothar H., Hsu, William Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 530 KB

english, 1987

6

Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures

Mendez, E. E., Wang, W. I., Calleja, E., Gonçalves da Silva, C. E. T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 514 KB

english, 1987

7

Temperature dependence of viscosity of molten GaAs by an oscillating cup method

Kakimoto, Koichi, Hibiya, Taketoshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 454 KB

english, 1987

8

Monte Carlo algorithm for hot phonons in polar semiconductors

Lugli, P., Jacoboni, C., Reggiani, L., Kocevar, P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 526 KB

english, 1987

9

Diode lasers with cylindrical mirror facets and reduced beam divergence

Walpole, J. N., Liau, Z. L., Missaggia, L. J., Yap, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 564 KB

english, 1987

10

Heterojunction double-barrier diodes for logic applications

Liu, H. C., Coon, D. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 532 KB

english, 1987

11

Wavelength dependence of the excimer laser etching characteristics of a polymeric resist

Davis, G. M., Gower, M. C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 690 KB

english, 1987

12

Boron heavy doping for Si molecular beam epitaxy using a HBO2 source

Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 524 KB

english, 1987

13

Pulse shortening of actively mode-locked diode lasers by wavelength tuning

Serenyi, M., Kuhl, J., Göbel, E. O.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 561 KB

english, 1987

14

Electro-optic measurement of standing waves in a GaAs coplanar waveguide

Zhu, Z. H., Pan, C. L., Lo, Y. H., Wu, M. C., Wang, S., Kolner, B. H., Wang, S. Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 510 KB

english, 1987

15

Carbon monoxide laser excited by radio-frequency discharge

Pearson, G. N., Hall, D. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 417 KB

english, 1987

16

O+ implantation and annealing in n-type InAlAs

Lee, Wai, Fonstad, Clifton G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 500 KB

english, 1987

17

Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)

Hinkel, V., Sorba, L., Haak, H., Horn, K., Braun, W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 575 KB

english, 1987

18

Above barrier doublets in GaAs/AlxGa1−xAs superlattices

Song, J. J., Yoon, Y. S., Jung, P. S., Fedotowsky, A., Schulman, J. N., Tu, C. W., Brown, J. M., Huang, D., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 542 KB

english, 1987

19

High-temperature observation of heavy-hole and light-hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy

Kawaguchi, Yoshihiro, Asahi, Hajime

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 497 KB

english, 1987

20

Visible, room-temperature, surface-emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter-wave high reflectors and AlGaAs/GaAs multiple quantum wells

Gourley, P. L., Drummond, T. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 553 KB

english, 1987

21

Wavelength control of iron/nickel composition in laser induced chemical vapor deposited films

Armstrong, J. V., Burk, A. A., Coey, J. M. D., Moorjani, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 474 KB

english, 1987

22

Bound-exciton-related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy

Juhl, A., Hoffmann, A., Bimberg, D., Schulz, H. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 479 KB

english, 1987

23

Synchrotron radiation-induced etching of a carbon film in an oxygen gas

Kyuragi, Hakaru, Urisu, Tsuneo

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 456 KB

english, 1987

24

Modeling UV response of rear-surface sensitized charge-coupled devices

Peckerar, M. C., Bosiers, J. T., McCarthy, D., Saks, N. S., Michels, D. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 523 KB

english, 1987

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