Volume 50; Issue 20

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Applied Physics Letters
Volume 50; Issue 20

Applied Physics Letters

Volume 50; Issue 20

1

Magnetic imaging by ââforce microscopyââ with 1000 AÌ resolution

Martin, Y., Wickramasinghe, H. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 632 KB

english, 1987

2

Chemically induced high-tilt surfaces for liquid crystals

Filas, Robert W., Patel, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 544 KB

english, 1987

3

Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition

Petruzzello, J., Olego, D., Ghandhi, S. K., Taskar, N. R., Bhat, I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

4

Polarization bistability in semiconductor laser: Rate equation analysis

Chen, Y. C., Liu, J. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 460 KB

english, 1987

5

Coupling of diode laser arrays with photorefractive passive phase conjugate mirrors

Segev, Mordechai, Weiss, Shimon, Fischer, Baruch

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 567 KB

english, 1987

6

Conductive, spin-cast carbon films from polyacrylonitrile

Renschler, C. L., Sylwester, A. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 541 KB

english, 1987

7

Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon

Aboelfotoh, M. O., Tawancy, H. M., d’Heurle, F. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 528 KB

english, 1987

8

Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 617 KB

english, 1987

9

Transient spectroscopy using the Hall effect

Kachwalla, Z., Miller, D. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 470 KB

english, 1987

10

Reduction of relative intensity noise in 1.3 μm InGaAsP semiconductor lasers

Hill, P., Olshansky, R., Schlafer, J., Powazinik, W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 486 KB

english, 1987

11

Effect of hydrogen on electromigration and 1/f noise in gold films

Rodbell, K. P., Ficalora, P. J., Koch, Roger

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 451 KB

english, 1987

12

Two-step rapid thermal annealing of Si-implanted InP:Fe

Rao, Mulpuri V., Thompson, Phillip E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 513 KB

english, 1987

13

Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces

Srinivasa, R., Panish, M. B., Temkin, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 523 KB

english, 1987

14

Determination of the atomic configuration at semiconductor interfaces

Ourmazd, A., Tsang, W. T., Rentschler, J. A., Taylor, D. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 644 KB

english, 1987

15

Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial silicon

Burger, W. R., Reif, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 551 KB

english, 1987

16

Activation ratio of Fe in Fe-doped semi-insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition

Sugawara, M., Kondo, M., Nakai, K., Yamaguchi, A., Nakajima, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 444 KB

english, 1987

17

Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers

Leopold, M. M., Specht, A. P., Zmudzinski, C. A., Givens, M. E., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 570 KB

english, 1987

18

Ultrasonic pole figure for the texture of an aluminum alloy

Hirao, M., Hara, N.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 389 KB

english, 1987

19

Ferroelectric domain inversion caused in LiNbO3 plates by heat treatment

Nakamura, Kiyoshi, Ando, Haruyasu, Shimizu, Hiroshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 474 KB

english, 1987

20

Radiative recombination coefficient of free carriers in GaAs-AlGaAs quantum wells and its dependence on temperature

Matsusue, Toshio, Sakaki, Hiroyuki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 620 KB

english, 1987

21

Linewidth enhancement factor in InGaAsP/InP multiple quantum well lasers

Green, C. A., Dutta, N. K., Watson, W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 404 KB

english, 1987

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