Volume 50; Issue 21

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Applied Physics Letters
Volume 50; Issue 21

Applied Physics Letters

Volume 50; Issue 21

1

High power with high efficiency in a narrow single-lobed beam from a diode laser array in an external cavity

Chang-Hasnain, C. J., Berger, J., Scifres, D. R., Streifer, W., Whinnery, J. R., Dienes, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 525 KB

english, 1987

2

Microcleavage transmission electron microscopy applied to the interfacial structure of multilayers and microstructure of small particles on a substrate

Lepe^tre, Y., Ziegler, E., Schuller, Ivan K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 447 KB

english, 1987

3

Near threshold sputtering of Si and SiO2 in a Cl2 environment

Oostra, D. J., van Ingen, R. P., Haring, A., de Vries, A. E., van Veen, G. N. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 599 KB

english, 1987

4

InGaP/InP waveguides

Joyner, C. H., Dentai, A. G., Alferness, R. C., Buhl, L. L., Divino, M. D., Dautremont-Smith, W. C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 555 KB

english, 1987

5

Stark effect in AlxGa1−xAs/GaAs coupled quantum wells

Le, H. Q., Zayhowski, J. J., Goodhue, W. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 575 KB

english, 1987

6

Metastable thermal donor states in silicon

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 553 KB

english, 1987

7

Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs-GaAs-AlxGa1−xAs double barrier structures

Tsuchiya, Masahiro, Sakaki, Hiroyuki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 642 KB

english, 1987

8

Phase transformation kinetics—the role of laser power and pulse width in the phase change cycling of Te alloys

Rubin, K. A., Barton, R. W., Chen, M., Jipson, V. B., Rugar, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 622 KB

english, 1987

9

Effect of thermodynamics on ion mixing

Workman, T. W., Cheng, Y. T., Johnson, W. L., Nicolet, M-A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

10

Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)]

Suzuki, Akira, Uemoto, Atsuko, Shigeta, Mitsuhiro, Furukawa, Katsuki, Nakajima, Shigeo

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 356 KB

english, 1987

11

Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films

Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., Chu, T. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 608 KB

english, 1987

12

Effects of hydrogen ion implantation on Al/Si Schottky diodes

Yapsir, A. S., Hadizad, P., Lu, T.-M., Corelli, J. C., Lanford, W. A., Bakhru, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 649 KB

english, 1987

13

Picosecond optical sampling by semiconductor lasers

Ketterer, K., Böttcher, E. H., Bimberg, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 578 KB

english, 1987

14

Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

Horning, R. D., Staudenmann, J.-L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 563 KB

english, 1987

15

Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

Cinguino, P., Genova, F., Rigo, C., Cacciatore, C., Stano, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 582 KB

english, 1987

16

Picosecond excite-and-probe absorption measurement of the intra-2EgE3/2-state vibrational relaxation time in Ti3+:Al2O3

Gayen, S. K., Wang, W. B., Petričević, V., Yoo, K. M., Alfano, R. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 513 KB

english, 1987

17

Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimony

Komem, Y., Harrison, H. B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 565 KB

english, 1987

18

Acoustic wave viscosity sensor

Ricco, A. J., Martin, S. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

19

Laser energy deposition at sapphire surfaces studied by pulsed photothermal deformation

Dreyfus, R. W., McDonald, F. A., von Gutfeld, R. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 500 KB

english, 1987

20

Fluorine in low-pressure chemical vapor deposited W/Si contact structures: Inclusion and thermal stability

Whitlow, H. J., Eriksson, Th., Östling, M., Petersson, C. S., Keinonen, J., Anttila, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 445 KB

english, 1987

21

Two- and three-dimensional magnetoluminescence measurements in a GaAs/AlGaAs multiple quantum well

Johnson, G. R., Cavenett, B. C., Kana’ah, A., Pakulis, E. J., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 518 KB

english, 1987

22

Electro-optical characteristics of a new liquid-crystal display with an improved gray-scale capability

Leenhouts, F., Schadt, M., Fromm, H.-J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 457 KB

english, 1987

23

Hydrogen evolution in aluminum plasma deposited silicon nitride layered structures

Kikkawa, T., Watanabe, H., Murata, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 448 KB

english, 1987

24

Design of low velocity-spread cusp guns for axis encircling beams

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 436 KB

english, 1987

25

Comment on “Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition”

Segall, B., Alterovitz, S. A., Haugland, E. J., Matus, L. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 586 KB

english, 1987

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