Volume 50; Issue 23

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Applied Physics Letters
Volume 50; Issue 23

Applied Physics Letters

Volume 50; Issue 23

1

Surface quantum wells

Cohen, R. M., Kitamura, M., Fang, Z. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 603 KB

english, 1987

2

Evidence of strong Auger recombination in semiconductor‐doped glasses

de Rougemont, F., Frey, R., Roussignol, P., Ricard, D., Flytzanis, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 619 KB

english, 1987

3

Recrystallization kinetics pattern in III-V implanted semiconductors

Licoppe, C., Nissim, Y. I., Meriadec, C., HeÌnoc, P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 601 KB

english, 1987

4

High-corrosion-resistant magneto-optical recording media using TbFeCoTi films

Kobayashi, M., Asano, M., Maeno, Y., Oishi, K., Kawamura, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 327 KB

english, 1987

5

Optical intensity modulation to 40 GHz using a waveguide electro-optic switch

Korotky, S. K., Eisenstein, G., Tucker, R. S., Veselka, J. J., Raybon, G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 545 KB

english, 1987

6

High-power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

Tihanyi, P., Wagner, D. K., Roza, A. J., Vollmer, H. J., Harding, C. M., Davis, R. J., Wolf, E. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 546 KB

english, 1987

7

Low-temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source

Kisker, D. W., Steigerwald, M. L., Kometani, T. Y., Jeffers, K. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 544 KB

english, 1987

8

Electron spin resonance observation of defects in device oxides damaged by soft x rays

Triplett, B. B., Takahashi, T., Sugano, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 628 KB

english, 1987

9

Optimizing the performance of AlGaAs graded index separate confining heterostructure quantum well lasers

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

10

Threshold for argon bubble growth in sputtered amorphous Nb3Ge

Pruymboom, A., Berghuis, P., Kes, P. H., Zandbergen, H. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 547 KB

english, 1987

11

Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition

Shigeta, Mitsuhiro, Nakanishi, Kenji, Fujii, Yoshihisa, Furukawa, Katsuki, Hatano, Akitsugu, Uemoto, Atsuko, Suzuki, Akira, Nakajima, Shigeo

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 493 KB

english, 1987

12

GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy

Mitsunaga, K., Noda, S., Kojima, K., Kameya, M., Kyuma, K., Hamanaka, K., Nakayama, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 525 KB

english, 1987

13

High efficiency, multiple layer ZnO acoustic transducers at millimeter-wave frequencies

Hadimioglu, B., La Comb, L. J., Wright, D. R., Khuri-Yakub, B. T., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 620 KB

english, 1987

14

Optically detected electron cyclotron resonance in silicon

Pakulis, E. J., Northrop, G. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 580 KB

english, 1987

15

Optical switching by saturation-induced phase changes in an active directional coupler

Liu, J. M., Yeh, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 499 KB

english, 1987

16

NbN/BN granular films—a sensitive, high-speed detector for pulsed far-infrared radiation

Leung, M., Strom, U., Culbertson, J. C., Claassen, J. H., Wolf, S. A., Simon, R. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 619 KB

english, 1987

17

Low-loss single-mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy

Kapon, E., Bhat, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 556 KB

english, 1987

18

Negative differential resistance of double barrier diodes at zero bias

Liu, H. C., Coon, D. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 460 KB

english, 1987

19

In situ spectroscopic ellipsometry investigation of the nucleation of microcrystalline silicon

Drevillon, B., Godet, C., Kumar, Satyendra

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 494 KB

english, 1987

20

Pair of local vibration mode absorption bands related to EL2 defects in semi-insulating GaAs

Song, Chunying, Ge, Weikun, Jiang, Desheng, Hsu, Chenchia

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 516 KB

english, 1987

21

Phase diagram and superconductivity in the Y-Ba-Cu-O system

Hinks, D. G., Soderholm, L., Capone, D. W., Jorgensen, J. D., Schuller, Ivan K., Segre, C. U., Zhang, K., Grace, J. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 477 KB

english, 1987

22

Erratum: Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells [Appl. Phys. Lett. 50, 821 (1987)]

Dubard, J., Oudar, J. L., Alexandre, F., Hulin, D., Orszag, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 223 KB

english, 1987

23

Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperature

Horikoshi, Yoshiji, Kawashima, Minoru, Yamaguchi, Hiroshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 399 KB

english, 1987

24

Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering

Epler, J. E., Burnham, R. D., Thornton, R. L., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 512 KB

english, 1987

25

Ultrathin gate oxides formed by catalytic oxidation of silicon

Oellig, Eva M., Michel, E. G., Asensio, M. C., Miranda, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 629 KB

english, 1987

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