Volume 50; Issue 25

Main
Applied Physics Letters
Volume 50; Issue 25

Applied Physics Letters

Volume 50; Issue 25

1

Intermixing of AlxGa1âxAs/GaAs superlattices by pulsed laser irradiation

Ralston, J., Moretti, A. L., Jain, R. K., Chambers, F. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 658 KB

english, 1987

2

Comparison of microwave and lower frequency discharges for plasma polymerization

Claude, R., Moisan, M., Wertheimer, M. R., Zakrzewski, Z.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 562 KB

english, 1987

3

Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity

Choi, K.-K., Levine, B. F., Bethea, C. G., Walker, J., Malik, R. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 605 KB

english, 1987

4

Molybdenum-silicon multilayer monochromator for the extreme ultraviolet

Barbee, Troy W., Pianetta, Piero, Redaelli, Renato, Tatchyn, Roman, Barbee, Troy W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 581 KB

english, 1987

5

Nitridation of iron by pulsed excimer laser treatment under liquid ammonia: Mössbauer spectroscopic study

Ogale, S. B., Patil, P. P., Roorda, S., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 587 KB

english, 1987

6

Kinetics of silicon-induced mixing of AlAs-GaAs superlattices

Mei, P., Yoon, H. W., Venkatesan, T., Schwarz, S. A., Harbison, J. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 548 KB

english, 1987

7

Electrical measurements on n+-GaAs/undoped AlAs/n-GaAs and n+-GaAs/undoped AlAs:GaAs superlattice/n-GaAs capacitors

Kirby, P. B., Kerr, T. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 531 KB

english, 1987

8

Effect of optical pulse duration on the XeCl laser ablation of polymers and biological tissue

Taylor, R. S., Singleton, D. L., Paraskevopoulos, G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 522 KB

english, 1987

9

Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium-trimethylphosphine adduct source

Lee, M. K., Wuu, D. S., Tung, H. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 518 KB

english, 1987

10

Lanthanum hexaboride (LaB6) resistivity measurement

Williams, M. D., Jackson, L. T., Kippenhan, D. O., Leung, K. N., West, M. K., Crawford, C. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 471 KB

english, 1987

11

Picosecond carrier recombination dynamics of semiconductor-doped glasses

Hsu, S. C., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 514 KB

english, 1987

12

Piezoelectricity of c-axis oriented PbTiO3 thin films

Kushida, Keiko, Takeuchi, Hiroshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 433 KB

english, 1987

13

InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy

Temkin, H., Gershoni, D., Panish, M. B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 516 KB

english, 1987

14

On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 577 KB

english, 1987

15

Erratum: Epitaxial alignment of arsenic-implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]

Hoyt, J. L., Crabbé, E., Gibbons, J. F., Pease, R. F. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 211 KB

english, 1987

16

Pressure dependence of electron transport in InP

Patel, D., Sites, J. R., Spain, I. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 432 KB

english, 1987

17

Amplification of high bandwidth signals through two-wave mixing in photorefractive Bi12SiO20 crystals

de Montchenault, G. Hamel, Loiseaux, B., Huignard, J. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 576 KB

english, 1987

18

cw surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence

Mitsunaga, Kazumasa, Kameya, Masaaki, Kojima, Keisuke, Noda, Susumu, Kyuma, Kazuo, Hamanaka, Koichi, Nakayama, Takashi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 518 KB

english, 1987

19

Si donor neutralization in high-purity GaAs

Pan, N., Lee, B., Bose, S. S., Kim, M. H., Hughes, J. S., Stillman, G. E., Arai, Ken-ichi, Nashimoto, Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 605 KB

english, 1987

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски