Volume 50; Issue 26

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Applied Physics Letters
Volume 50; Issue 26

Applied Physics Letters

Volume 50; Issue 26

1

Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombination

Tang, Ming, Wang, Shyh

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 621 KB

english, 1987

2

Recrystallization solvent effects on second-order nonlinear optical organic materials

Tabei, Hisao, Kurihara, Takashi, Kaino, Toshikuni

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 509 KB

english, 1987

3

Pulse-laser-irradiated high-brightness photoelectron source

Oettinger, P. E., Bursuc, I., Shefer, R. E., Pugh, E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 579 KB

english, 1987

4

Chemically enhanced focused ion beam etching of deep grooves and laser-mirror facets in GaAs under Cl2 gas irradiation using a fine nozzle

Takado, N., Asakawa, K., Yuasa, T., Sugata, S., Miyauchi, E., Hashimoto, H., Ishii, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 489 KB

english, 1987

5

High-performance thin-film transistors from optimized polycrystalline silicon films

Meakin, D. B., Coxon, P. A., Migliorato, P., Stoemenos, J., Economou, N. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 596 KB

english, 1987

6

Physics of the enhancement of impact ionization in multiquantum well structures

Brennan, Kevin, Hess, Karl, Capasso, Federico

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 623 KB

english, 1987

7

Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization

Krusin-Elbaum, L., Wittmer, M., Yee, D. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 601 KB

english, 1987

8

Crystallography and microstructure of Y1Ba2Cu3O9−x, a perovskite-based superconducting oxide

Beyers, R., Lim, G., Engler, E. M., Savoy, R. J., Shaw, T. M., Dinger, T. R., Gallagher, W. J., Sandstrom, R. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 616 KB

english, 1987

9

dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor

Najjar, F. E., Radulescu, D. C., Chen, Y.-K., Wicks, G. W., Tasker, P. J., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 595 KB

english, 1987

10

Microstructural studies of reactive ion etched silicon

Jeng, S. J., Oehrlein, G. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 785 KB

english, 1987

11

Cascade-driven migration of structural interfaces: A new type of irradiation-induced phase transformation

Allen, C. W., Rehn, L. E., Wiedersich, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 611 KB

english, 1987

12

Energy-gap spectroscopy of superconductors using a tunneling microscope

Le Duc, H. G., Kaiser, W. J., Stern, J. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 600 KB

english, 1987

13

Optical nonlinearity in mercury telluride

Wolff, P. A., Yuen, S. Y., Harris, K. A., Cook, J. W., Schetzina, J. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 492 KB

english, 1987

14

Free-carrier effects on luminescence linewidths in quantum wells

Skolnick, M. S., Nash, K. J., Saker, M. K., Bass, S. J., Claxton, P. A., Roberts, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

15

Improved quality Si-on-Si3N4 structures by ion beam synthesis and lamp annealing

Reeson, K. J., Hemment, P. L. F., Meekison, C. D., Booker, G. R., Kilner, J. A., Chater, R. J., Davis, J. R., Celler, G. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 547 KB

english, 1987

16

Nondestructive analysis of silicon-on-insulator wafers

Bunker, S. N., Sioshansi, P., Sanfacon, M. M., Tobin, S. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 519 KB

english, 1987

17

Specular beam intensity behavior in reflection high-energy electron diffraction during molecular beam epitaxial growth of Al0.3Ga0.7As on GaAs(100) and implications for inverted interfaces

Cho, N. M., Chen, P., Madhukar, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

18

Antiphase-domain-free growth of cubic SiC on Si(100)

Shibahara, K., Nishino, S., Matsunami, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 546 KB

english, 1987

19

Spontaneously vitrifying crystalline alloys

von Allmen, M., Blatter, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 552 KB

english, 1987

20

Dominance of surface recombination current in planar, Be-implanted GaAs p-n junctions prepared by rapid thermal annealing

de Lyon, T. J., Casey, H. C., Timmons, M. L., Hutchby, J. A., Dietrich, D. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 510 KB

english, 1987

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