Volume 50; Issue 3

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Applied Physics Letters
Volume 50; Issue 3

Applied Physics Letters

Volume 50; Issue 3

1

Femtosecond carrier dynamics in GaAs

Lin, W. Z., Fujimoto, L. G., Ippen, E. P., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 645 KB

english, 1987

2

Order-disorder transformation in ternary tetrahedral semiconductors

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 601 KB

english, 1987

3

Growth of semi-insulating GaAs crystals with low carbon concentration using pyrolytic boron nitride coated graphite

T. Inada, T. Fujii, T. Kikuta, T. Fukuda

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 595 KB

english, 1987

4

Comparison of diamondlike coatings deposited with C+ and various hydrocarbon ion beams

Anttila, A., Koskinen, J., Lappalainen, R., Hirvonen, J-P., Stone, D., Paszkiet, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 521 KB

english, 1987

5

Bias-dependent photoresponse of p+in GaAs/AlAs/GaAs diodes

Melloch, M. R., McMahon, C. P., Lundstrom, M. S., Cooper, J. A., Qian, Q-D., Bandyopadhyay, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 487 KB

english, 1987

6

High resolution transmission electron microscopy of silicon-on-insulator formed by high dose oxygen implantation

Chang, Peng-Heng, Mao, Bor-Yen

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 616 KB

english, 1987

7

Inherent memory effect in a SrS:Ce,K blue-emitting electroluminescent thin-film device

Tanaka, Shosaku, Yoshiyama, Hideki, Mikami, Yoshiro, Nishiura, Junichi, Ohshio, Shozo, Deguchi, Hiroshi, Kobayashi, Hiroshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 431 KB

english, 1987

8

Short pulse amplification in the presence of absorption

Tilleman, M. M., Jacob, J. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 468 KB

english, 1987

9

CdS induced homojunction formation in crystalline p-CuInSe2

Matson, R. J., Noufi, R., Bachmann, K. J., Cahen, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 581 KB

english, 1987

10

Exact analytical solution to diffusion equation for ion-implanted dopant profile evolution during annealing

Moroi, D. S., Hemenger, P. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 416 KB

english, 1987

11

Pulsed laser oxidation and nitridation of metal surfaces immersed in liquid media

Ogale, S. B., Polman, A., Quentin, F. O. P., Roorda, S., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 538 KB

english, 1987

12

InGaAsP/InP optical switches using carrier induced refractive index change

Ishida, K., Nakamura, H., Matsumura, H., Kadoi, T., Inoue, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 403 KB

english, 1987

13

Picosecond transient reflectivity of unpinned gallium arsenide (100) surfaces

Beck, S. M., Wessel, J. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 529 KB

english, 1987

14

Effect of Si on the reaction kinetics of Ti/AlSi bilayer structures

Nahar, R. K., Devashrayee, N. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 372 KB

english, 1987

15

Study of dynamic current distribution in logic circuits by Joule displacement microscopy

Martin, Y., Wickramasinghe, H. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 505 KB

english, 1987

16

Electrical activation of arsenic ion-implanted polycrystalline silicon by rapid thermal annealing

Wong, C. Y., Komem, Y., Harrison, H. B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 520 KB

english, 1987

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