Volume 50; Issue 4

Applied Physics Letters

Volume 50; Issue 4
2

Plasma-enhanced metalorganic chemical vapor deposition of GaAs

Huelsman, A. D., Reif, R., Fonstad, C. G.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 495 KB
english, 1987
3

Tunneling in In0.53Ga0.47As-InP double-barrier structures

Vuong, T. H. H., Tsui, D. C., Tsang, W. T.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 590 KB
english, 1987
4

Instability mechanism in hydrogenated amorphous silicon thin-film transistors

Schropp, R. E. I., Verwey, J. F.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 560 KB
english, 1987
5

TiC, Ti, and C as a mixing barrier for Ni-Si ion beam mixing

Nastasi, M., Hirvonen, J-P., Caro, M., Rimini, E., Mayer, J. W.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 594 KB
english, 1987
7

Low-temperature chemical vapor deposition of SiO2 at 2–10 Torr

Bennett, B. R., Lorenzo, J. P., Vaccaro, K.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 591 KB
english, 1987
9

Antiphase boundaries in epitaxially grown β-SiC

Pirouz, P., Chorey, C. M., Powell, J. A.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 614 KB
english, 1987
10

E0+Δ0 transitions in GaSb/AlSb quantum wells

Forchel, A., Cebulla, U., Tränkle, G., Ziem, U., Kroemer, H., Subbanna, S., Griffiths, G.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 498 KB
english, 1987
12

Use of tertiarybutylarsine for GaAs growth

Chen, C. H., Larsen, C. A., Stringfellow, G. B.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 571 KB
english, 1987
14

Improved surface nitridation of SiO2 thin films in low ammonia pressures

Ronda, A., Glachant, A., Plossu, C., Balland, B.
Journal:
Applied Physics Letters
Year:
1987
Language:
english
File:
PDF, 617 KB
english, 1987