Volume 50; Issue 5

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Applied Physics Letters
Volume 50; Issue 5

Applied Physics Letters

Volume 50; Issue 5

1

Strong 8.2 Î¼m infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

Levine, B. F., Malik, R. J., Walker, J., Choi, K. K., Bethea, C. G., Kleinman, D. A., Vandenberg, J. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 571 KB

english, 1987

2

High efficiency indium oxide/cadmium telluride solar cells

Nakazawa, T., Takamizawa, K., Ito, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 402 KB

english, 1987

3

Unexpected unidirectional anisotropy in amorphous Tb-Fe/Ni-Fe-Mo bilayer films

Hellman, F., van Dover, R. B., Gyorgy, E. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 644 KB

english, 1987

4

High power, AlGaAs buried heterostructure lasers with flared waveguides

Welch, D. F., Cross, P. S., Scifres, D. R., Streifer, W., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 491 KB

english, 1987

5

Effects of reactive ion etching on chemical vapor deposition

Wong, C. Y., Batson, P. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 532 KB

english, 1987

6

Subthreshold model of a polycrystalline silicon thin-film field-effect transistor

Faughnan, Brian

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 570 KB

english, 1987

7

Unpinning of the Fermi level on GaAs by flowing water

Ives, N. A., Stupian, G. W., Leung, M. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 564 KB

english, 1987

8

Electro-optical performance of a new, black-white and highly multiplexable liquid crystal display

Schadt, Martin, Leenhouts, Frans

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 581 KB

english, 1987

9

Quasiparticle trapping and the quasiparticle multiplier

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 586 KB

english, 1987

10

Infrared Raman probing of deep-lying damaged layers in hydrogen-implanted GaAs

Anastassakis, E., Tatarkiewicz, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 650 KB

english, 1987

11

Nb/GaAs and NbN/GaAs Schottky barriers

Wu, X. W., Zhang, L. C., Bradley, P., Chin, D. K., Van Duzer, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 616 KB

english, 1987

12

Nondestructive measurement of indium content in semi-insulating GaAs substrates and ingots

Kirillov, D., Vichr, M., Powell, R. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

13

Formation of epitaxial NiSi2 of single orientation on (111) Si inside miniature size oxide openings

Chang, C. S., Nieh, C. W., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 672 KB

english, 1987

14

Electron spin resonance studies on buried oxide silicon-on-insulator

Makino, T., Takahashi, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 474 KB

english, 1987

15

Interactions between bombardment-induced defects in GaAs

Makram-Ebeid, Sherif, Boher, Pierre, Lannoo, Michel

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 590 KB

english, 1987

16

Dependence of radiation-induced interface traps on silicide gate stoichiometry in silicide/SiO2/Si devices

Buchner, S., Natan, M., Kang, K., Gill, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 477 KB

english, 1987

17

cw phase-locked array Ga0.25In0.75As0.5P0.5-InP high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition

Razeghi, M., Blondeau, R., Krakowski, M., de Cremoux, B., Duchemin, J. P., Lozes, F., Martinot, M., Bensoussan, M. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 511 KB

english, 1987

18

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

Lum, R. M., Klingert, J. K., Lamont, M. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 547 KB

english, 1987

19

Optical and electronic properties of reactively sputtered amorphous GeNx:H

Honma, I., Kawai, K., Komiyama, H., Tanaka, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 473 KB

english, 1987

20

Observation of valence-band discontinuity of hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction by photocurrent-voltage measurements

Okayasu, Yoshinobu, Fukui, Keitaro, Matsumura, Mitsuo

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 427 KB

english, 1987

21

Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation

Schwarz, S. A., Venkatesan, T., Hwang, D. M., Yoon, H. W., Bhat, R., Arakawa, Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 569 KB

english, 1987

22

Transverse instability of an electron beam in a beam-induced ion channel

Nguyen, K. T., Schneider, R. F., Smith, J. R., Uhm, H. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 514 KB

english, 1987

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