Volume 50; Issue 7

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Applied Physics Letters
Volume 50; Issue 7

Applied Physics Letters

Volume 50; Issue 7

1

Tunneling transfer field-effect transistor: A negative transconductance device

Vinter, B., Tardella, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

2

V-grooved inner-stripe laser diodes on a p-type substrate operating over 100 mW at 1.5 μm wavelength

Horikawa, H., Oshiba, S., Matoba, A., Kawai, Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 538 KB

english, 1987

3

Determination of band offsets using the photovoltaic effect: Application to the PbS/PbSe heterostructure

Chu, T. K., Agassi, D., Martinez, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 572 KB

english, 1987

4

Effects of 450 °C thermal annealing upon oxygen precipitation in heavily B- and Sb-doped Czochralski Si

Hahn, S., Arst, M., Rek, Z. U., Stojanoff, V., Bulla, D. A., Castro, W. E., Tiller, W. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 633 KB

english, 1987

5

Enhanced PtSi formation using a gold layer between Pt and Si

Song, Jerng-Sik, Chang, Chin-An

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 541 KB

english, 1987

6

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

Michel, A. E., Rausch, W., Ronsheim, P. A., Kastl, R. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

7

Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

Temkin, H., Dolan, G. J., Panish, M. B., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 647 KB

english, 1987

8

Nonlinear optical absorption in bulk GaInAs/InP at room temperature

Fox, A. M., Maciel, A. C., Ryan, J. F., Scott, M. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 621 KB

english, 1987

9

Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

Dupuis, R. D., van der Ziel, J. P., Logan, R. A., Brown, J. M., Pinzone, C. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 561 KB

english, 1987

10

Reduction of the field spectrum linewidth of a multiple quantum well laser in a high magnetic field—spectral properties of quantum dot lasers

Vahala, Kerry, Arakawa, Yasuhiko, Yariv, Amnon

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 579 KB

english, 1987

11

Attainment of submillimeter periods and a 0.3-T peak field in a novel micropole undulator device

Tatchyn, Roman, Csonka, Paul L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 535 KB

english, 1987

12

Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes

Haase, M. A., Emanuel, M. A., Smith, S. C., Coleman, J. J., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 424 KB

english, 1987

13

Acoustic-jet plating of gold and copper at 7.5 MHz

von Gutfeld, R. J., Vigliotti, D. R., Wickramasinghe, H. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

14

InGaAs/InP multiple quantum well waveguide phase modulator

Koren, U., Koch, T. L., Presting, H., Miller, B. I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 478 KB

english, 1987

15

Ultrasensitive coherent Raman technique with picosecond lasers

Schauer, M. W., Pellin, M. J., Biwer, B. M., Gruen, D. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 500 KB

english, 1987

16

Oscillation frequency tuning characteristics of fiber-extended-cavity distributed-feedback lasers

Liou, K.-Y., Ku, R. T., Shen, T. M., Anthony, P. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 601 KB

english, 1987

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