Volume 51; Issue 1

Applied Physics Letters

Volume 51; Issue 1
1

1.3 μm electro‐optic silicon switch

Year:
1987
Language:
english
File:
PDF, 577 KB
english, 1987
4

Fiber-optic evanescent field absorption sensor

Year:
1987
Language:
english
File:
PDF, 524 KB
english, 1987
8

Improvements in the heteroepitaxy of GaAs on Si

Year:
1987
Language:
english
File:
PDF, 590 KB
english, 1987
11

Nonequilibrium electron transport in bipolar devices

Year:
1987
Language:
english
File:
PDF, 525 KB
english, 1987
13

Characterization of interface defects in GaAs-GaAlAs superlattices

Year:
1987
Language:
english
File:
PDF, 475 KB
english, 1987
17

Long-range order in InxGa1−xAs

Year:
1987
Language:
english
File:
PDF, 535 KB
english, 1987
18

Effect of deposition process on the thin-film ZnS/p-Si interface

Year:
1987
Language:
english
File:
PDF, 580 KB
english, 1987