Volume 51; Issue 10

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Applied Physics Letters
Volume 51; Issue 10

Applied Physics Letters

Volume 51; Issue 10

1

Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system

Wu, Wei‐Yu, Schulman, J. N., Hsu, T. Y., Efron, Uzi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 647 KB

english, 1987

2

Photoconductivity in CuInSe2 thin films

Ramanathan, V., Datta, T., Noufi, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 464 KB

english, 1987

3

Synthesis of diamond films in a rf induction thermal plasma

Matsumoto, Seiichiro, Hino, Mototsugu, Kobayashi, Toyohiko

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 494 KB

english, 1987

4

Electron mobility in p-GaAs by time of flight

Ahrenkiel, R. K., Dunlavy, D. J., Greenberg, D., Schlupmann, J., Hamaker, H. C., MacMillan, H. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 392 KB

english, 1987

5

Characterization of frequency dispersion in Ti-indiffused lithium niobate optical devices

J. L. Nightingale, R. A. Becker, P. C. Willis, J. S. Vrhel

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

6

Second harmonic generation in Ge-doped fibers with a mode-locked Kr+ laser

Valk, B., Kim, E. M., Salour, M. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 593 KB

english, 1987

7

Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxy

Andersson, T. G., Chen, Z. G., Kulakovskii, V. D., Uddin, A., Vallin, J. T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 572 KB

english, 1987

8

Growth of high-quality GaxIn1−xAsyP1−y by chemical beam epitaxy

Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., Agyekum, E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 635 KB

english, 1987

9

Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load-locked system

Vawter, G. Allen, Coldren, Larry A., Merz, James L., Hu, Evelyn L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 685 KB

english, 1987

10

Annealing induced strain in 31P+-implanted Si (111) and Si (100)

Zsoldos, L., Petó, G., Zsoldos, E., Brogren, G., Kanski, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 549 KB

english, 1987

11

55 kW, 240 fs pulse generation from a cavity dumped, synchronously pumped dye laser and its application to pulse compression

Nakazawa, Masataka, Nakashima, Takashi, Kubota, Hirokazu, Seikai, Shigeyuki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 557 KB

english, 1987

12

Thermionic emission model for the initial regime of silicon oxidation

Irene, E. A., Lewis, E. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 651 KB

english, 1987

13

Transmission gratings that diffract 8 keV x rays

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 456 KB

english, 1987

14

Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si-implanted GaAs layer

Sato, Takashi, Tajima, Michio, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 624 KB

english, 1987

15

Laser blow-off plasma propagating in low-pressure gas

Bakos, J. S., Ignácz, P. N., Szigeti, J., Kovács, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 427 KB

english, 1987

16

Low-threshold room-temperature cw operation of (AlGaAs)m(GaAs)n superlattice quantum well lasers emitting at ∼680 nm

Hayakawa, T., Suyama, T., Takahashi, K., Kondo, M., Yamamoto, S., Hijikata, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

17

Multiple quantum well coupling element with losses

Cada, M., Gauthier, R. C., Paton, B. E., Glinski, J. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 489 KB

english, 1987

18

High-pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs

Licoppe, C., Savary, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 469 KB

english, 1987

19

Ellipsometric analysis of built-in electric fields in semiconductor heterostructures

Snyder, Paul G., Oh, Jae E., Woollam, John A., Owens, R. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 472 KB

english, 1987

20

Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy

Davey, S. T., Spurdens, P. C., Wakefield, B., Nelson, A. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 472 KB

english, 1987

21

Reflection electron microscopic observation of high-temperature grown GaAs surfaces of molecular beam epitaxy

Shimizu, N., Muto, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 577 KB

english, 1987

22

Low-threshold disorder-defined buried-heterostructure AlGaAs diode lasers by anisotropic diffusion of laser-incorporated Si

Epler, J. E., Burnham, R. D., Thornton, R. L., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 621 KB

english, 1987

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