Volume 51; Issue 14

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Applied Physics Letters
Volume 51; Issue 14

Applied Physics Letters

Volume 51; Issue 14

1

Identification of an interstitial carbon-interstitial oxygen complex in silicon

Trombetta, J. M., Watkins, G. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 603 KB

english, 1987

2

Estimation of the thickness of thin metal sheet using laser generated ultrasound

Dewhurst, R. J., Edwards, C., McKie, A. D. W., Palmer, S. B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 529 KB

english, 1987

3

Staggered hollow-bore CO2 waveguide laser array

Hart, R. A., Newman, L. A., Cantor, A. J., Kennedy, J. T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 514 KB

english, 1987

4

High-efficiency Al0.3Ga0.7As solar cells grown by molecular beam epitaxy

Amano, Chikara, Sugiura, Hideo, Ando, Koshi, Yamaguchi, Masafumi, Saletes, Anne

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 568 KB

english, 1987

5

Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

McLarty, P. K., Cole, J. W., Galloway, K. F., Ioannou, D. E., Bernacki, S. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 475 KB

english, 1987

6

Pulsed laser etching of high Tc superconducting films

Inam, Arun, Wu, X. D., Venkatesan, T., Ogale, S. B., Chang, C. C., Dijkkamp, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

7

Narrowband, single line, 1 μs XeF laser

Kimura, W. D., Guyer, Dean R., Seamans, J. F., Ford, D. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 596 KB

english, 1987

8

New method to relax thermal stress in GaAs grown on Si substrates

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 440 KB

english, 1987

9

High-temperature resistivity of the Ba2YCu3Ox superconductor

Grader, G. Sageev, Gallagher, P. K., Gyorgy, E. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 482 KB

english, 1987

10

Wavelength selective interlayer directionally grating-coupled InP/InGaAsP waveguide photodetection

Koch, T. L., Corvini, P. J., Tsang, W. T., Koren, U., Miller, B. I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 552 KB

english, 1987

11

Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4

Salimian, S., Cooper, C. B., Norton, R., Bacon, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 426 KB

english, 1987

12

Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor deposition

Sanada, T., Nakai, K., Wakao, K., Kuno, M., Yamakoshi, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 442 KB

english, 1987

13

Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors

van Berkel, C., Powell, M. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 510 KB

english, 1987

14

Chemical beam epitaxial growth of high-purity GaAs using triethylgallium and arsine

Chiu, T. H., Tsang, W. T., Schubert, E. F., Agyekum, E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 494 KB

english, 1987

15

Enhancement in excitonic absorption due to overlap in heavy-hole and light-hole excitons in GaAs/InAlGaAs quantum well structures

Kothiyal, G. P., Hong, S., Debbar, N., Bhattacharya, P. K., Singh, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 507 KB

english, 1987

16

Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 474 KB

english, 1987

17

Resonant level lifetime in GaAs/AlGaAs double-barrier structures

Bahder, Thomas B., Morrison, Clyde A., Bruno, John D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 409 KB

english, 1987

18

Electron accumulation layer at n-Si/non-liquid electrolyte interfaces

Benisty, H., Colomban, Ph., Chazalviel, J.-N.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 599 KB

english, 1987

19

Nearly degenerate four-wave mixing in a traveling-wave semiconductor laser amplifier

Inoue, Kyo, Mukai, Takaaki, Saitoh, Tadashi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 642 KB

english, 1987

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