Volume 51; Issue 16

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Applied Physics Letters
Volume 51; Issue 16

Applied Physics Letters

Volume 51; Issue 16

1

Giant magnetic coercivity and percolation effects in granular Fe-(SiO2) solids

Xiao, Gang, Chien, C. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 682 KB

english, 1987

2

Digital optical switch

Silberberg, Y., Perlmutter, P., Baran, J. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 642 KB

english, 1987

3

Elimination of birefringence in garnet films for magneto-optic waveguide devices

Wolfe, R., Fratello, V. J., McGlashan-Powell, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 606 KB

english, 1987

4

Oxide conductive coated cathodes for a sealed-off CO2 laser

Hsieh, Tai-Chiung, Lan, Yuan-Liang

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 584 KB

english, 1987

5

High-speed light valve using an amorphous silicon photosensor and ferroelectric liquid crystals

Takahashi, N. Shin-ichi, Asada, Hideki, Miyahara, Masaki, Kurita, Shoichi, Kuriyama, Hiroyuki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 540 KB

english, 1987

6

Enhanced Cu-Teflon adhesion by presputtering treatment: Effect of surface morphology changes

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 503 KB

english, 1987

7

Electronic optical bistability in a GaAs/AlGaAs strip-loaded waveguide

Warren, M., Gibbons, W., Komatsu, K., Sarid, D., Hendricks, D., Gibbs, H. M., Sugimoto, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 673 KB

english, 1987

8

High-pretilt polyphenylene layers for liquid-crystal displays

Nehring, J., Amstutz, H., Holmes, P. A., Nevin, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 426 KB

english, 1987

9

Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique

Hattori, K., Mori, T., Okamoto, H., Hamakawa, Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 595 KB

english, 1987

10

Spectral evolution in an electron beam pumped XeF laser

Harris, D. G., Burde, D. H., Malins, R. J., Tillotson, J. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 572 KB

english, 1987

11

Enhanced ballistic transport in InGaAs/InAlAs hot-electron transistors

Chen, J., Reddy, U. K., Mui, D., Peng, C. K., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 485 KB

english, 1987

12

Simultaneous, multiple wavelength lasing of (Er, Nd):Y3Al5O12

Shi, W. Q., Kurtz, R., Machan, J., Bass, M., Birnbaum, M., Kokta, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 631 KB

english, 1987

13

Excimer laser in situ treatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes

Maki, P. A., Ehrlich, D. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 700 KB

english, 1987

14

Rapid thermal anneal induced effects in polycrystalline silicon gate structures

Kamgar, Avid, Hillenius, S. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 564 KB

english, 1987

15

Effects of trichloroethane during oxide growth on radiation-induced interface traps in Metal/SiO2/Si capacitors

da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.-P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 532 KB

english, 1987

16

Bias dependence of instability mechanisms in amorphous silicon thin-film transistors

Powell, M. J., van Berkel, C., French, I. D., Nicholls, D. H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 503 KB

english, 1987

17

Ablation and etching of polymethylmethacrylate by very short (160 fs) ultraviolet (308 nm) laser pulses

Srinivasan, R., Sutcliffe, Emile, Braren, Bodil

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 524 KB

english, 1987

18

New hydride vapor phase epitaxy for GaP growth on Si

Mori, H., Ogasawara, M., Yamamoto, M., Tachikawa, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 477 KB

english, 1987

19

Erratum: Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescence [Appl. Phys. Lett. 51, 937 (1987)]

Bose, S. S., Lee, B., Kim, M. H., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 213 KB

english, 1987

20

Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on Si

Deppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Matyi, R. J., Shichijo, H., Epler, J. E., Chung, H. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 569 KB

english, 1987

21

Model calculation on the Meyer–Neldel rule for the field-effect conductance of hydrogenated amorphous silicon

Yoon, Byung-Gook, Lee, Choochon

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 426 KB

english, 1987

22

Subboundary-free zone-melt recrystallization of thin-film silicon

Pfeiffer, Loren, Gelman, A. E., Jackson, K. A., West, K. W., Batstone, J. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 519 KB

english, 1987

23

High power, high efficient neodymium:yttrium aluminum garnet laser end pumped by a laser diode array

Berger, Josef, Welch, David F., Scifres, Don R., Streifer, William, Cross, Peter S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 450 KB

english, 1987

24

Fast optical switching and optical bistability in a PbSnSe étalon

Reid, J. J. E., Kar, A. K., MacKenzie, H. A., Chua, P. L., Grisar, R., Preier, H. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 598 KB

english, 1987

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