Volume 51; Issue 18

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Applied Physics Letters
Volume 51; Issue 18

Applied Physics Letters

Volume 51; Issue 18

1

Effects of ZnSe epitaxial growth on the surface properties of GaAs

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 718 KB

english, 1987

2

Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature

Veuillen, J. Y., Derrien, J., Badoz, P. A., Rosencher, E., dâAnterroches, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 665 KB

english, 1987

3

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements

Yu, Young-June, Bosman, Gijs, Bhattacharya, P. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 547 KB

english, 1987

4

InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain-bandwidth product

Campbell, J. C., Tsang, W. T., Qua, G. J., Bowers, J. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 585 KB

english, 1987

5

Novel infrared band-aligned superlattice laser

Yuh, Perng-fei, Wang, K. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 585 KB

english, 1987

6

Lateral optical confinement of the heterostructure semiconductor Raman laser

Suto, K., Kimura, T., Nishizawa, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 481 KB

english, 1987

7

Buried heterostructure lasers by silicon implanted, impurity induced disordering

Welch, D. F., Scifres, D. R., Cross, P. S., Streifer, W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 522 KB

english, 1987

8

Femtosecond hot-carrier energy relaxation in GaAs

Schoenlein, R. W., Lin, W. Z., Ippen, E. P., Fujimoto, J. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 646 KB

english, 1987

9

Ion beam amorphization of YBa2Cu3Ox

Clark, G. J., LeGoues, F. K., Marwick, A. D., Laibowitz, R. B., Koch, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 701 KB

english, 1987

10

Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

Baratte, H., Jackson, T. N., Solomon, P. M., LaTulipe, D. C., Frank, D. J., Moore, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 672 KB

english, 1987

11

Ion beam hydrogenation of amorphous silicon

Tsuo, Y. S., Smith, E. B., Deb, S. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 571 KB

english, 1987

12

Bistability in two-mode semiconductor lasers via gain saturation

Tang, C. L., Schremer, A., Fujita, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 612 KB

english, 1987

13

Hot-electron transport in GaAs in the presence of a magnetic field

Beton, P. H., Long, A. P., Kelly, M. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 573 KB

english, 1987

14

How perfect is a perfect crystal? Part-per-billion level mosaicity measurements in silicon

Deutsch, Moshe, Hart, Michael, Cummings, Stewart

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 605 KB

english, 1987

15

Lifetime measurements in semiconductors by infrared absorption due to pulsed optical excitation

Ling, Z. G., Ajmera, P. K., Anselment, M., DiMauro, L. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 468 KB

english, 1987

16

Measurement of gaseous oxygen using diode laser spectroscopy

Kroll, M., McClintock, J. A., Ollinger, O.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 482 KB

english, 1987

17

Model for defect-impurity pair diffusion in silicon

Mulvaney, B. J., Richardson, W. B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 515 KB

english, 1987

18

Optical bleaching in an epitaxial (Al,Ga)As Fabry–Perot resonator

Gourley, P. L., Drummond, T. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 557 KB

english, 1987

19

Dielectrically isolated silicon-on-insulator islands by masked oxygen implantation

Davis, J. R., Robinson, A., Reeson, K. J., Hemment, P. L. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 513 KB

english, 1987

20

Observation of resonant tunneling through a compositionally graded parabolic quantum well

Sen, Susanta, Capasso, Federico, Gossard, Arthur C., Spah, Richard A., Hutchinson, Albert L., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 628 KB

english, 1987

21

Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si

Landsberger, L. M., Tiller, W. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 654 KB

english, 1987

22

Optical properties of general twisted nematic liquid-crystal displays

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 566 KB

english, 1987

23

Novel physical effects in intersecting waveguides

McCaughan, L., Agrawal, Niraj, Bogert, G. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 544 KB

english, 1987

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