Volume 51; Issue 19

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Applied Physics Letters
Volume 51; Issue 19

Applied Physics Letters

Volume 51; Issue 19

1

1.3-Î¼m light-emitting diode from silicon electron irradiated at its damage threshold

Canham, L. T., Barraclough, K. G., Robbins, D. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 596 KB

english, 1987

2

Direct writing onto Si by electron beam stimulated etching

Matsui, Shinji, Mori, Katsumi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 503 KB

english, 1987

3

Heteroepitaxial growth of CdTe on InSb by metalorganic chemical vapor deposition

Sugiura, O., Tanaka, Y., Shiina, K., Matsumura, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 535 KB

english, 1987

4

Imaging of MoS2 by scanning tunneling microscopy

Stupian, Gary W., Leung, Martin S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 584 KB

english, 1987

5

Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures

Masselink, W. T., Braslau, N., Wang, W. I., Wright, S. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 596 KB

english, 1987

6

Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor

Woodward, T. K., McGill, T. C., Chung, H. F., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 646 KB

english, 1987

7

Hg incorporation in CdTe during the growth of HgTe-CdTe superlattices by molecular beam epitaxy

Reno, J., Sporken, R., Kim, Y. J., Hsu, C., Faurie, J. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 688 KB

english, 1987

8

In situ arsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition

Comfort, James H., Reif, Rafael

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 656 KB

english, 1987

9

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

Okamoto, A., Ohata, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 434 KB

english, 1987

10

GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

DenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 472 KB

english, 1987

11

Propagation characteristics of picosecond electrical transients on coplanar striplines

Hsiang, Thomas Y., Whitaker, John F., Sobolewski, Roman, Dykaar, Douglas R., Mourou, Gerard A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 529 KB

english, 1987

12

Crystal growth and characterization of 4-(N,N-dimethylamino)-3-acetamidonitrobenzene, a new organic material for nonlinear optics

Baumert, J.-C., Twieg, R. J., Bjorklund, G. C., Logan, J. A., Dirk, C. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 616 KB

english, 1987

13

Yield dependency on length of AlGaAs/GaAs second-order distributed feedback lasers with cleaved facets

Hirata, Shoji, Ohata, Toyoharu, Yamamoto, Tadashi, Kojima, Chiaki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 463 KB

english, 1987

14

Image processing by four-wave mixing in photorefractive GaAs

Gheen, Gregory, Cheng, Li-Jen

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 527 KB

english, 1987

15

SiFx and SFx molecular ion implantations into GaAs

Tamura, Akiyoshi, Inoue, Kaoru, Onuma, Takeshi, Sato, Minoru

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 408 KB

english, 1987

16

Negative ion formation at a barium surface in contact with a hydrogen plasma

van Os, C. F. A., Heeren, R. M. A., van Amersfoort, P. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 497 KB

english, 1987

17

Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Alpern, Y., Shappir, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 467 KB

english, 1987

18

Narrow two-dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth

Asai, Hiromitsu, Yamada, Syoji, Fukui, Takashi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 505 KB

english, 1987

19

Reduction of Hg1−xCdxTe native oxide during the SiNx deposition process

Sudo, G., Kajihara, N., Miyamoto, Y., Tanikawa, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 500 KB

english, 1987

20

Focused ion beam induced fine patterns of organogold films

Ohmura, Y., Shiokawa, T., Toyoda, K., Namba, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 492 KB

english, 1987

21

Efficient 30 mW grating surface-emitting lasers

Evans, G. A., Carlson, N. W., Hammer, J. M., Lurie, M., Butler, J. K., Palfrey, S. L., Carr, L. A., Hawrylo, F. Z., James, E. A., Kaiser, C. J., Kirk, J. B., Reichert, W. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 482 KB

english, 1987

22

Thermal gas effusion from hydrogenated amorphous carbon films

Wild, Ch., Koidl, P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 487 KB

english, 1987

23

Inhibition of charge packet broadening in GaAs charge-coupled devices

Song, J. I., Fossum, E. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 576 KB

english, 1987

24

Photon detection with cooled avalanche photodiodes

Robinson, D. L., Metscher, B. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 490 KB

english, 1987

25

Evidence of electron induced interfacial defects in electron-gun-deposited insulator InP structures

Choujaa, A., Kumar, S. N., Blanchet, R., Viktorovitch, P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 589 KB

english, 1987

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